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  2.38mh Datasheet PDF File

For 2.38mh Found Datasheets File :: 64    Search Time::3.032ms    
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    APT10086BVFR05

Advanced Power Technology
Part No. APT10086BVFR05
OCR Text ...250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10...38mh, r g = 25 ? , peak i l = 13a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5 i s - -...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 62.61K  /  4 Page

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    TT electronics Semelab, Ltd.
Part No. SML100B13
OCR Text ... , t stg t l i ar e ar e as 1 3 2 3.55 (0.140) 3.81 (0.150) 0.40 (0.016) 0.79 (0.031) 2.21 (0.087) 2.59 (0.102) 1.01 (0.040) 1.40 (0.055) ...38mh, r g = 25 w , peak i l = 13a v dss 1000v i d(cont) 13a r ds(on) 0.860 w w w w pin 1 C gate pin ...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13 A, 1000 V, 0.86 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD

File Size 21.42K  /  2 Page

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    ST Microelectronics
Part No. VNQ810-E
OCR Text ...ground pin disconnection. table 2. order codes note: (**) see application schematic at page 9 typ e r ds(on) i out v cc vnq810-e 160m w (*...38mh; r l =0 w ; v bat =13.5v; t jstart =150oc; i l =5a) 23 mj p tot power dissipation (per island)...
Description QUAD CHANNEL HIGH SIDE DRIVER

File Size 212.84K  /  20 Page

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    IRF6608TR1

International Rectifier
Part No. IRF6608TR1
OCR Text 2 directfet isometric applicable directfet outline and substrate outline (see p.7, 8 for details) sq sx st mq mx mt application spe...38mh r g = 25 ? , i as = 8.8a. pulse width 400s; duty cycle 2%. surface mounted...
Description 13 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
Application Specific MOSFETs

File Size 180.41K  /  9 Page

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    Thinki Semiconductor
Part No. U55NF06
OCR Text ...y symbol 1.gate 3.source 2.drain to-251/ipak u55nf06 to-251/ipak p55nf06 to-220 d55nf06 to-252/dpak absolute maximum ratings ...38mh, i as =50a, v dd =25v, r g =20, starting t j =25c 4. i sd 50a, di/dt 300a/s, v dd bv dss ,...
Description N-CHANNEL POWER MOSFET TRANSISTOR

File Size 295.86K  /  6 Page

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    50N06G-TQ2-R 50N06G-TQ2-T 50N06L-TND-R 50N06L-TQ2-T 50N06G-TND-R 50N06G-TN3-T 50N06L-TN3-T

Unisonic Technologies
Part No. 50N06G-TQ2-R 50N06G-TQ2-T 50N06L-TND-R 50N06L-TQ2-T 50N06G-TND-R 50N06G-TN3-T 50N06L-TN3-T
OCR Text ...y ? symbol 1.gate 3.source 2.drain to-220 to-220f to-252 to-251 1 1 to-263 1 1 1 to-252d 1 ? ordering information ordering number ...38mh, i as =50a, v dd =25v, r g =20 ? , starting t j =25c 4. i sd 50a, di/dt 300a/ s, v dd bv ...
Description 50 Amps, 60 Volts N-CHANNEL POWER MOSFET

File Size 357.63K  /  8 Page

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    Thinki Semiconductor Co., Ltd.
Part No. P55NF06 F55NF06
OCR Text ...y symbol 1.gate 3.source 2.drain to-251/ipak u55nf06 to-251/ipak p55nf06 to-220 d55nf06 to-252/dpak absolute maximum ratings ...38mh, i as =50a, v dd =25v, r g =20, starting t j =25c 4. i sd 50a, di/dt 300a/s, v dd bv dss ,...
Description N-CHANNEL POWER MOSFET TRANSISTOR

File Size 314.65K  /  6 Page

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    VNQ810TR-E

STMicroelectronics
Part No. VNQ810TR-E
OCR Text ...ground pin disconnection. table 2. order codes note: (**) see application schematic at page 9 typ e r ds(on) i out v cc vnq810-e 160m w (*...38mh; r l =0 w ; v bat =13.5v; t jstart =150oc; i l =5a) 23 mj p tot power dissipation (per island)...
Description QUAD CHANNEL HIGH SIDE DRIVER

File Size 223.87K  /  20 Page

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