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  16500 Datasheet PDF File

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    VN770K 8711

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. VN770K 8711
OCR Text ...0 Internally Limited -10.5 4000 16500 6 Internally limited Internally limited -55 to 150 Unit V V mA A A V V W C C C ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (8V < VCC < 36V; -40C < Tj < 150C, unless otherwise specified) POW...
Description From old datasheet system
QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS

File Size 301.64K  /  20 Page

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    DSEI2X61 DSEI2X61-02A

IXYS Corporation
Part No. DSEI2X61 DSEI2X61-02A
OCR Text ...0.3400 0.3600 0.00014 0.00600 0.16500 DSEI 2x61-02 G H J K L M N O P Q R S 0.01 0.0001 0.001 0.01 0.1 1 t s 10 Fig. 7 Transient thermal impedance junction to case miniBLOC SOT-227 B M4 screws (4x) supplied ...
Description FAST RECOVERY EPITAXIAL DIODE (FRED)

File Size 64.02K  /  2 Page

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    VND7NV04 VND7NV04-1 VND7NV0413TR VNN7NV04 VNN7NV0413TR VNS7NV0413TR VNS7NV04

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. VND7NV04 VND7NV04-1 VND7NV0413TR VNN7NV04 VNN7NV0413TR VNS7NV0413TR VNS7NV04
OCR Text ...0 Internally Limited -10.5 4000 16500 7 40 37 Internally limited Internally limited -55 to 150 4.6 60 40 Unit V V mA A A V V W mJ mJ C C C CONNECTION DIAGRAM (TOP VIEW) SOURCE SOURCE SOURCE INPUT 1 8 DRAIN DRAIN DRAIN 4 ...
Description “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET
"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET

File Size 486.51K  /  29 Page

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    APT60M75JVFR

Advanced Power Technology
Part No. APT60M75JVFR
OCR Text ...RG = 0.6 MIN TYP MAX UNIT pF 16500 1900 750 700 80 330 20 20 80 12 19800 2660 1125 1050 120 495 40 40 120 24 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOUR...
Description POWER MOS V FREDFET

File Size 189.66K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APT60M75JVR APT60M75
OCR Text ...5C RG = 0.6 MIN TYP MAX UNIT 16500 1900 750 700 80 330 20 20 80 12 19800 2660 1125 1050 120 495 40 40 120 24 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time S...
Description POWER MOS V 600V 62A 0.075 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.24K  /  4 Page

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    KD100GB40 DD100GB80 KD100GB80 DD100GB40

http://
SANREX[SanRex Corporation]
Sanrex, Corp.
Part No. KD100GB40 DD100GB80 KD100GB80 DD100GB40
OCR Text ...0 960 Ratings 100 155 1800/2000 16500 40 150 40 125 2500 4.7 48) 2.7 28) 170 Unit V V Unit A A A A2S Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage Item Average Forward Current R.M.S. Forward Current Surge Forward...
Description DIODE MODULE 二极管模

File Size 441.60K  /  2 Page

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    FMM5051VF

Eudyna Devices Inc
Part No. FMM5051VF
OCR Text ...0 14000 14500 15000 15500 16000 16500 17000 .740 .739 .627 .518 .178 .239 .400 .406 .450 .467 .600 .711 .785 -81.857 -101.149 -116.071 -139.881 168.355 6.386 -37.02 -70.73 -105.697 -149.353 -170.36 167.121 150.759 S-PARAMETERS VDD = 5V, ...
Description 13.75-14.5GHz Power Amplifier MMIC

File Size 113.32K  /  4 Page

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