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  125c-tj Datasheet PDF File

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    IRF130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF130SMD
OCR Text ...mA IDS = 7A VDS = 0.8BVDSS TJ = 125C ID = 1mA Min. 100 Typ. Max. Unit V DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) Static Drain - Source On-State Resistance Forward Transconductance Zero Gate Voltage D...
Description N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 22.36K  /  2 Page

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    IRF140SMD

International Rectifier
Seme LAB
Part No. IRF140SMD
OCR Text ...IDS = 13.9A VDS = 0.8BVDSS TJ = 125C VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 22A 1 0.13 0.077 0.125 2 9.1 25 250 100 -100 1660 550 120 4 V / C W V S(W )W( VGS(th) Gate Threshold Voltage gf...
Description N-CHANNEL POWER MOSFET

File Size 22.30K  /  2 Page

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    IRF150SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF150SMD
OCR Text ...A IDS = 19A VDS = 0.8BVDSS TJ = 125C VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 27A 1 0.13 0.070 0.081 2 9 25 250 100 -100 3700 1100 200 4 V / C W V S(W )W( VGS(th) Gate Threshold Voltage gfs...
Description N-CHANNEL POWER MOSFET

File Size 22.29K  /  2 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text ... IDS = 8.8A VDS = 0.8BVDSS TJ = 125C VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 13.9A 1 0.29 0.180 0.250 2 6.1 25 250 100 -100 1300 400 130 4 V / C W V S(W )W( VGS(th) Gate Threshold Voltage ...
Description    N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

File Size 22.29K  /  2 Page

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    IRF250SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF250SMD
OCR Text ...A IDS = 14A VDS = 0.8BVDSS TJ = 125C VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 22A 1 0.29 0.100 0.105 2 9 25 250 100 -100 3500 700 110 4 V / C W V S(W )W( VGS(th) Gate Threshold Voltage gfs ...
Description N.CHANNEL POWER MOSFET

File Size 23.37K  /  2 Page

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804S-7P
OCR Text ... = 0V VDS = 40V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID = 160A VDS = 32V VGS = 10V VDD = 20V ID = 160A RG = 2.6 VGS = 10V V/C Reference to 25C, ID = 1mA VDS = VGS, ID = 250A e e d Between lead, 6mm (0.25in.) from package an...
Description AUTOMOTIVE MOSFET

File Size 260.32K  /  10 Page

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    IRF2804 IRF2804L IRF2804S

IRF[International Rectifier]
Part No. IRF2804 IRF2804L IRF2804S
OCR Text ... = 0V VDS = 40V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID = 75A VDS = 32V VGS = 10V VDD = 20V ID = 75A RG = 2.5 VGS = 10V f f D G S Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, S...
Description 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 273.77K  /  12 Page

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    IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS
OCR Text ... = 0V VDS = 75V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V ID = 75A nC VDS = 60V VGS = 10V ns VDD = 38V ID = 75A RG = 2.5 VGS = 10V D nH Between lead, f f f 6mm (0.25in.) from package G Diode Characteristics Parameter IS ...
Description AUTOMOTIVE MOSFET 汽车MOSFET
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 359.66K  /  12 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ... 250 VDS = 120V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V 95 ID = 12A 11 nC VDS = 120V 47 VGS = 10V, See Fig. 6 and 13 --- VDD = 75V --- ID = 12A ns --- RG = 5.1 --- RD = 5.9, See Fig. 10 Between lead, nH --- and center of die...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

File Size 193.12K  /  10 Page

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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ... 250 VDS = 120V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V 95 ID = 12A 11 nC VDS = 120V 47 VGS = 10V, See Fig. 6 and 13 --- VDD = 75V --- ID = 12A ns --- RG = 5.1 --- RD = 5.9, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G f...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

File Size 121.12K  /  8 Page

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