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100a 800v Datasheet PDF File

For 100a 800v Found Datasheets File :: 1199 Search Time::1.422ms
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				ADPOW[Advanced Power Technology]
Part No.	APT8065BVR APT8065 APT8065AVR
OCR Text	...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.45 40 3 See MIL-ST...
Description	POWER MOS V 800v 13A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.69K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065SVR
OCR Text	...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.45 40 3 See MIL-ST...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 800v 13A 0.650 Ohm
File Size	63.31K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065 APT8065AVR
OCR Text	...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.62 30 3 See MIL-ST...
Description	POWER MOS V 800v 11.5A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.68K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8067HVR
OCR Text	...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.62 40 3 See MIL-ST...
Description	POWER MOS V 800v 11.5A 0.670 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.92K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8075BVFR
OCR Text	...Time (IS = -ID [Cont.], di/dt = 100a/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100a/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100a/s) 160 305 1.8 6.0 11 18 250 525 THERMAL CHARACTERISTICS Symbol RJC RJA Chara...
Description	POWER MOS V 800v 12A 0.750 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	69.90K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology]
Part No.	APT8075BVR APT8075
OCR Text	...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.48 40 3 See MIL-ST...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800v 12A 0.750 Ohm
File Size	61.94K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8075 APT8075BN APT8090BN
OCR Text	...me (IS = -ID [Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100a/s) Q rr SAFE OPERATING AREA CHARACTERISTICS Symbol SOA1 SOA2 ILM Characteristic Safe Operating Area Safe Operating Area Inductive Curre...
Description	POWER MOS V 800v 13.0A 0.75 Ohm / 800v 12.0A 0.90 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	49.95K / 4 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	CM100DY-28H
OCR Text	... = 0V IC = 10mA, VCE = 10V IC = 100a, VGE = 15V IC = 100a, VGE = 15V, Tj = 125C Total Gate Charge VCC = 800v, IC = 100a, VGE = 15V * Pulse width and repetition rate should be such that device junction temperature rise is negligible. Min...
Description	Dual IGBTMOD 100 Amperes/1400 Volts
File Size	67.61K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CM50DY-28H
OCR Text	... tf trr Qrr IE = 50A, diE/dt = -100a/s IE = 50A, diE/dt = -100a/s VCC = 800v, IC = 50A, VGE1 = VGE2 = 15V, RG = 6.3 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 0.5 Max. 10 3.5 2.0 100 250 150 500 300 - Un...
Description	IGBT Modules:1400V MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	48.00K / 4 Page	View it Online	Download Datasheet

				Micro Commercial Components, Corp. MCC[Micro Commercial Components]
Part No.	FR154GP FR157GP FR153GP FR152GP FR155GP FR151GP FR156GP
OCR Text	...5.0A TA = 25C Rated DC Blocking 100a TA = 100C Voltage Maximum Reverse Recovery Time 150ns IF=0.5A, IR=1.0A, FR151GP-154GP Trr 250ns Irr=0.25A FR155GP 500ns FR156GP-157GP Typical Junction CJ 20pF Measured at Capacitance 1.0MHz, VR=4.0V *Pul...
Description	1.5 Amp Glass Passivated Fast Recovery Rectifier 50 to 1000 Volts 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15 1.5 Amp Glass Passivated Fast Recovery Rectifier 50 to 1000 Volts 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15
File Size	82.30K / 3 Page	View it Online	Download Datasheet

For 100a 800v Found Datasheets File :: 1199 Search Time::1.422ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |