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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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Part No. |
IRF830
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OCR Text |
...DSS = 500 V ID = 5.9 A RDS(ON) 1.5
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use ...1us
10us
1ms 100us 10ms tp, pulse width (s)
100ms
1s
Fig.1. Normalised power dissipat... |
Description |
PowerMOS transistor Avalanche energy rated 5.9 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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File Size |
54.17K /
7 Page |
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