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MHST02 D1913 5C270GDR LUCL9500 X4325S8 CZMK30V FSB5055 L9500A
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  0.25-v Datasheet PDF File

For 0.25-v Found Datasheets File :: 481446    Search Time::8.172ms    
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    2SA2048

Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SA2048
OCR Text ...nsions (Units : mm) TSMT3 1.9 0.95 0.95 (1) 2.8 1.6 0.4 (3) (2) 2.9 1.0MAX 0.16 (1)Base (2)Emitter (3)Collector 0.1...25 VIN PW IB1 IC VCC -25V IB2 PW 50s DUTY CYCLE 1% IB2 IB1 BASE CURRENT WAVEFORM 90%...
Description Medium power transistor (−30V, −1.0A)
Medium power transistor (-30V, -1.0A)

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    2SA2049

ROHM[Rohm]
Part No. 2SA2049
OCR Text ...ensions (Units : mm) MPT3 1.5 0.4 1.0 (1) 4.0 2.5 0.5 0.5 (3) 1.5 0.4 (1)Base (2)Collector (3)Emitter 0.4 Each...25 - pF VCB= -10V, IE=0A, f=1MHz Ton - 25 - ns IC= -2.0A IB1= -200mA Tstg - 100 - ns IB2=200mA Tf - ...
Description MEDIUM POWER TRANSISTOR

File Size 42.56K  /  4 Page

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    2SA2056

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2056
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) High-speed switching: tf = 90 ns (...25 -55 -0.6 IB = -2 mA Common emitter Ta = 25C Single nonrepetitive pulse -0.4 -0.8 -1.2 -1...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 189.75K  /  5 Page

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    2SA2057

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2057
OCR Text ...0.2 Solder Dip 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 Absolute Maximum Ratings TC = 25C Parameter Collector-base volta...25 (1) 20 15 10 5 (2) 0 0 20 40 60 80 100 120 140 160 0 0 - 0.4 - 0.8 -1.2 IC VBE -10 VCE(sa...
Description Silicon PNP epitaxial planar type

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    2SA2058

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2058
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 25 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emit...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 194.32K  /  5 Page

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    2SA2059

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2059
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns ...25 Collector current -3 DC current gain -20 -10 IB = -5 mA 100 -55 -2 -1 ...
Description SILICON PNP EPITAXIAL TYPE

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    2SA2061

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2061
OCR Text ...nt gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns ...25 -55 Collector current -3 20 15 IB = 10 mA DC current gain -2 100 -1 0 0 ...
Description Silicon PNP Epitaxial Type

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    2SA2062 2SC5774

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2062 2SC5774
OCR Text ... tf Conditions VCB=(--)160V, IE=0 VEB=(--)4V, IC=0 VCE=(--)5V, IC=(--)1A VCE=(--)5V, IC=(--)5A VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz VCE...25)0.4 Ratings min typ max (--)0.1 (--)0.1 60 35 (10)15 (280)140 1.5 (-0.3)0.2 (--)2.0 MHz pF V V V ...
Description 140V / 10A, AF70W Output Applications

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    2SA2064

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2064
OCR Text ...0.2 Solder Dip 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 Absolute Maximum Ratings TC = 25C Parameter Collector-base volta...25 2.0 150 -55 to +150 C C Unit V V V A A W 1 2 2.540.30 5.080.50 3 1: Base 2: Collector 3: E...
Description Silicon PNP epitaxial planar type

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    2SA2069

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2069
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.15 A) Low collector-emitter saturation voltage: VCE (sat) = -0.14 V (max) High-speed switching: tf = 37 ns...25 Collector current DC current gain IC -55 10 Common emitter VCE = -2 V Single nonre...
Description High-Speed Switching Applications DC-DC Converter Applications

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