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Renesas Electronics, Corp.
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
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| Part No. |
H5N2522FN-E-T2 H5N2522FN
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| OCR Text |
... -- -- -- -- -- Typ -- -- -- -- 0.13 1300 185 62 24 57 190 69 0.89 93 Max -- 10 0.1 4.0 0.17 -- -- -- -- -- -- -- 1.35 -- Unit V A A V pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 VDS = 250 V, VGS = 0 VGS = 30 V, VDS = 0 V... |
| Description |
Silicon N Channel MOS FET High Speed Power Switching 通道场效应晶体管高速电源开
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| File Size |
101.63K /
7 Page |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
H5N3004P
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| OCR Text |
0 Apr. 2002 Features
* Low on-resistance * Low leakage current * High speed switching * Low gate charge (Qg) * Avalanche ratings
Outline
TO-3P
D
G
1
S
2
3
1. Gate 2. Drain (Flange) 3. Source
H5N3004P
Absolute Max... |
| Description |
Silicon N Channel MOS FET High Speed Power Switching
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| File Size |
92.52K /
10 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
Renesas Electronics, Corp.
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| Part No. |
H5N3011P-E H5N3011P
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| OCR Text |
... 300 30 88 176 88 176 30 54 150 0.833 150 -55 to +150 Unit V V A A A A A mJ W C/W C C
Rev.2.00, Aug.05.2004, page 1 of 6
H5N3011P
Electrical Characteristics
(Ta = 25C)
Item Drain to Source breakdown voltage Zero Gate voltage Drai... |
| Description |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching 通道场效应晶体管高速电源开
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| File Size |
107.52K /
7 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
H5N5001FM
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| OCR Text |
... V(BR)DSS I GSS Min 500 -- -- 3.0 -- 3.0 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 1.1 4.5 580 70 13 20 15 65 15 15 3 8 0.85 400 1.5 Max -- 0.1 1 4.0 1.5 -- -- -- -- -- -- -- -- -- -- -- 1.3 -- -- Unit V A A V S pF pF pF ns ns... |
| Description |
Silicon N Channel MOS FET High Speed Power Switching
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| File Size |
56.82K /
10 Page |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
H5N5004PL
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| OCR Text |
...* Low on-resistance: R DS(on) = 0.09 typ. Low leakage current: IDSS = 10 A max (at VDS = 500 V) High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A) Low gate charge: Qg = 220 nC typ (at VDD = 400 V, VGS = 10 V, ID ... |
| Description |
Silicon N Channel MOS FET High Speed Power Switching
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| File Size |
27.20K /
5 Page |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
H5N6001P
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| OCR Text |
...alue 600 30 20 80 20 80 6.5 150 0.833 150 -55 to +150
Unit V V A A A A A W C/W C C
Pch*
ch-c Tch Tstg
Rev.0, May 2001, page 2 of 2
H5N6001P
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Zero... |
| Description |
Silicon N-Channel MOSFET High-Speed Power Switching
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| File Size |
95.48K /
10 Page |
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it Online |
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Pulse A Technitrol Comp...
PULSE[Pulse A Technitrol Company]
Pulse Engineering, Inc.
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| Part No. |
H6080 H5062 H6062
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| OCR Text |
... 1 2
Insertion Loss (dB MAX) 0.1 MHz -1.1 -1.1 -1.1 100 MHz 125 MHz -1.0 -2.0 -1.0 -2.0 -1.0 -2.0 30 MHz -18 -18 -18
Return Loss (2out = 100 15%) 60 MHz -12 -12 -12
Crosstalk (adjacent channels, dB MIN)
No Yes Yes
80 MHz 100... |
| Description |
Star MagneticsTM Gigabit Transformer Modules with PoE Option
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| File Size |
141.69K /
3 Page |
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it Online |
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友顺科技股份有限公司
UTC[Unisonic Technologies]
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| Part No. |
H654-T94-K H654
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| OCR Text |
...
RATINGS 20 -35 50 Unlimited 0.3 0.4 0.7 500 0 ~ +70 +125 -40 ~ +150
UNIT V V V
A mW
ELECTRICAL CHARACTERISTICS (Ta =25, unless otherwise specified.)
PARAMETER Low Supply Voltage Supply Voltage Output Saturation Voltage Outp... |
| Description |
LINEAR INTEGRATED CIRCUIT
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| File Size |
181.53K /
5 Page |
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Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
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| Part No. |
H7155-20 H7155
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| OCR Text |
...4 1.5 x 106 100 500 70 30 3.6 3.0 50 Positive logic +5 to +40 -20 to +50 75
H7155-20
70
Unit V V mA mm nm
1.2 x 105 *2 2.7 x 105 *2 2.2 x 105 *2 2.1 x 104 *2 10 x 106 *2 100 *2 500 *2 10 Depends on count rate. 2.2 2.0
s-1*pW-... |
| Description |
Photon Counting Head
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| File Size |
81.39K /
2 Page |
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it Online |
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Price and Availability
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