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0.0121 Datasheet PDF File

For 0.0121 Found Datasheets File :: 2531 Search Time::1.625ms
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				EPCOS ETC[ETC] List of Unclassifed Manufacturers Electronic Theatre Controls, Inc.
Part No.	B45396-R2337-50 B45396 B45396-A0687-50 B45396-A1477-50 B45396-A2337-50 B45396-R0108-50 B45396-R0687-50 B45396-R1477-50
OCR Text	... EPCOS E EIA/ IECQ 7343H L 7,3 0,3 (,236 0,12) W 4,3 0,3 (,169 0,12) H 4,1 0,3 (,157 ,012) Dimensions in mm (inches) L2 typ. 7,1 (,280) W 2 0,1 (,004) 2,4 (,094) H2 typ. 1,6 (,062) P 0,3 (,12) 1,3 (,051) Part Number Reference: ...
Description	Tantalum Multiple Anode 多阳极钽
File Size	207.06K / 3 Page	View it Online	Download Datasheet

				KEMET[Kemet Corporation]
Part No.	B45396R7477M599 B45396R B45396R0477K506 B45396R0477K509 B45396R0477K596 B45396R0477K599 B45396R0477M506 B45396R0477M509 B45396R0477M596 B45396R0477M599 B45396R1477K506 B45396R1477K509 B45396R1477K596 B45396R1477K599 B45396R1477M506 B45396R1477M509 B45396R1477M596 B45396R1477M599 B45396R2477K506 B45396R2477K509 B45396R2477K596 B45396R2477K599 B45396R2477M506 B45396R2477M509 B45396R2477M596 B45396R2477M599 B45396R3477K506 B45396R3477K509 B45396R3477K596 B45396R3477K599 B45396R3477M506 B45396R3477M509 B45396R3477M596 B45396R3477M599 B45396R4477K506 B45396R4477K509 B45396R4477K596 B45396R4477K599 B45396R4477M506 B45396R4477M509 B45396R4477M596 B45396R4477M599 B45396R5477K506 B45396R5477K509 B45396R5477K596 B45396R5477K599 B45396R5477M506 B45396R5477M509 B45396R5477M596 B45396R5477M599 B45396R6477K506 B45396R6477K509 B45396R6477K596 B45396R6477K599 B45396R6477M506 B45396R6477M509 B45396R6477M596 B45396R6477M599 B45396R7477K506 B45396R7477K509 B45396R7477K596 B45396R7477K599 B45396R7477M506 B45396R7477M509 B45396R7477M596
OCR Text	...retardant plastic case (UL 94 V-0) Tinned terminals Features High volumetric efficiency Ultra-low ESR values High ripple current capability Excellent solderability Stable temperature and frequency characteristics Low leakage current, low di...
Description	Multiple Anode, Ultra-low ESR
File Size	423.49K / 12 Page	View it Online	Download Datasheet

				http:// INFINEON[Infineon Technologies AG]
Part No.	BFG135A
OCR Text	...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 100 mA, VCE = 8 V hFE 80 120 250 IEBO...
Description	NPN Silicon RF Transistor
File Size	97.94K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BFG10_X BFG10 BFG10/X
OCR Text	...e CONDITIONS open emitter; IC = 0.1 mA open base; IC = 5 mA open collector; IE = 0.1 mA VCE = 5 V; VBE = 0 IC = 50 mA; VCE = 5 V IE = ie = 0; VCB = 3.6 V; f = 1 MHz IC = 0; VCE = 3.6 V; f = 1 MHz PARAMETER thermal resistance from junction t...
Description	NPN 2 GHz RF power transistor
File Size	74.69K / 10 Page	View it Online	Download Datasheet

				EPCOS[EPCOS]
Part No.	B49410B2126Q000
OCR Text	...0 mHz) (without terminals) (V = 0 V) (TA = 25 C; V = VR) (TA = 25 C; I = 50 A) Top Tst CR VR 1200 10/+30 2.5 830 3.0 4.3 3750 3.2 4.4 2.8 350 750 330 0.23 30/+70 40/+70 90000 500000 F % V mAh kW/kg kW/I J Wh/kg Wh/I V g I C C h cycles ...
Description	Single cell 1200 F/ 2.5 V
File Size	107.21K / 2 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BFE520
OCR Text	...um power gain noise figure Ie = 0; VCB = 3 V; f = 1 MHz IC = 20 mA; VCE = 3 V; f = 900 MHz IC = 20 mA; VCE = 3 V; f = 2 GHz IC = 5 mA; VCE = 3 V; f = 900 MHz; S = opt IC = 5 mA; VCE = 3 V; f = 2 GHz; S = opt hFE Rth j-s DC current gain ther...
Description	NPN wideband differential transistor
File Size	58.95K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BFE505
OCR Text	...um power gain noise figure Ie = 0; VCB = 3 V; f = 1 MHz IC = 5 mA; VCE = 3 V; f = 900 MHz IC = 5 mA; VCE = 3 V; f = 2 GHz IC = 2 mA; VCE = 3 V; f = 900 MHz; S = opt IC = 3 mA; VCE = 3 V; f = 2 GHz; S = opt hFE Rth j-s DC current gain therma...
Description	NPN wideband differential transistor
File Size	58.86K / 8 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited SEME-LAB[Seme LAB]
Part No.	BFC61
OCR Text	0.420) 9.65 (0.380) 5.33 (0.210) 4.83 (0.190) 1.40 (0.020) 0.51 (0.055) 3.05 (0.120) 2.54 (1.000) 3.73 (0.147) 3.53 (0.139) Dia. 4.83 (0.190) 3.56 (0.140) SEME BFC61 4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE PO...
Description	4TH GENERATION MOSFET
File Size	24.08K / 2 Page	View it Online	Download Datasheet

				EPCOS[EPCOS]
Part No.	B49410B2506Q000
OCR Text	...0 mHz) (without terminals) (V = 0 V) (TA = 25 C; V = VR) (TA = 25 C; I = 100 A) Top Tst CR VR 5000 10/+30 2.5 3500 2.0 2.3 15625 4.1 4.7 2.8 180 350 1050 0.93 30/+70 40/+70 90000 500000 F % V mAh kW/kg kW/I J Wh/kg Wh/I V g I C C h cycles...
Description	Single cell 5000 F/ 2.5 V
File Size	107.96K / 2 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BFC520
OCR Text	...TER CONDITIONS IC = 2.5 A; IE = 0 IE = 2.5 A; IC = 0 IE = 0; VCB = 6 V IC = 20 mA; VCE = 6 V IC = 20 mA; VC2-E1 = 3 V; f = 1 GHz IE = ie = 0; VC2-B2 = 1 V; f = 1 MHz IC = 0; VC2-E1 = 3 V; f = 1 MHz IC = 0; VC2-E1 = 3 V; f = 1 MHz MIN. TYP. ...
Description	NPN wideband cascode transistor
File Size	101.92K / 12 Page	View it Online	Download Datasheet

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