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For vgss Found Datasheets File :: 9579 Search Time::0.859ms
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				Sanyo Semicon Device Hitachi Semiconductor
Part No.	2SJ278
OCR Text	...Storage temperature Symbol VDSS vgss ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -60 20 -1 -4 -1 1 150 -55 to +150 Unit V V A A A W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value on the alumina ceramic board (12.5x20x0.7 mm) 3....
Description	Silicon P-Channel MOS FET
File Size	41.20K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ317
OCR Text	...Storage temperature Symbol VDSS vgss ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -12 -7 2 4 2 1 150 -55 to +150 Unit V V A A A W C C Notes: 1. PW 100 s, duty cycle 10% 2. Value on the alumina ceramic board (12.5x20x0.7 mm). 3....
Description	Silicon P-Channel MOS FET
File Size	37.77K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ319 2SJ319L 2SJ319S
OCR Text	.... Value at TC = 25C Symbol VDSS vgss ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -200 20 -3 -12 -3 20 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to sou...
Description	Power switching MOSFET Silicon P-Channel MOS FET
File Size	44.83K / 9 Page	View it Online	Download Datasheet

				Sanyo Semicon Device Toshiba Semiconductor
Part No.	2SJ339
OCR Text	...Storage Temperature Symbol VDSS vgss ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Conditions 2.4 Ratings -60 20 -25 -100 2 40 150 -55 to +150 Unit V V A A W W ...
Description	P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	39.40K / 4 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
Part No.	2SJ340
OCR Text	...Storage Temperature Symbol VDSS vgss ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings -60 20 -30 -120 1.65 70 150 -55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta = 25C Parameter Drain-to-Sour...
Description	Ultrahigh-Speed Switching Applications 超高速开关应
File Size	40.73K / 4 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ350
OCR Text	.... Value at TC = 25C Symbol VDSS vgss ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -120 20 -6 -12 -6 20 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to sou...
Description	Silicon P-Channel MOS FET
File Size	46.11K / 9 Page	View it Online	Download Datasheet

				Renesas Electronics, Corp. HITACHI[Hitachi Semiconductor]
Part No.	2SJ352 2SJ351
OCR Text	...ture Note: 1. Value at TC = 25C vgss ID I DR Pch* Tch Tstg 1 Symbol VDSX Ratings -180 -200 20 -8 -8 100 150 -55 to +150 Unit V V A A W C C 2 2SJ351, 2SJ352 Electrical Characteristics (Ta = 25C) Item Drain to source brea...
Description	Silicon P-Channel MOS FET 硅P沟道场效应晶体管
File Size	39.26K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ353 2SJ353-T D11216EJ1V0DS00
OCR Text	...ain Current (Pulse) SYMBOL VDSS vgss ID(DC) ID(pulse) PW 10 ms, Duty cycle 1 % VGS = 0 VDS = 0 TEST CONDITIONS RATING -60 20/+10 1.5 3.0 UNIT V V A A Total Power Dissipation Channel Temperature Storage Temperature PT Tch Tstg 1.0...
Description	From old datasheet system P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING P-channel MOS-type silicon field effect transistor (-60
File Size	55.23K / 6 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00
OCR Text	...ain Current (Pulse) SYMBOL VDSS vgss ID(DC) ID(pulse) PW 10 ms Duty cycle 1 % 16 cm2 x 0.7 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING -30 -20/+10 2.0 4.0 UNIT V V A A Total Power Dissipation Channel Temperature S...
Description	From old datasheet system P-CHANNEL MOS FET FOR HIGH SWITCHING P-channel MOS FET (-30V, -2A)
File Size	64.46K / 6 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ356 2SJ356-T2 2SJ356-T1 D11218EJ1V0DS00
OCR Text	...ain Current (Pulse) SYMBOL VDSS vgss ID(DC) ID(pulse) PW 10 ms Duty cycle 1 % 16 cm2 x 0.7 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING -60 -20/+10 2.0 4.0 UNIT V V A A Total Power Dissipation Channel Temperature S...
Description	From old datasheet system P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING P-channel MOSFET
File Size	65.63K / 6 Page	View it Online	Download Datasheet

For vgss Found Datasheets File :: 9579 Search Time::0.859ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |