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Matsshita / Panasonic
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| Part No. |
MA6X718
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| OCR Text |
... Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 M...1V
1.2
1
0.8
0.4
10-1
0
0
5
10
15
20
25
30
10-2 -40
0
... |
| Description |
Schottky Barrier Diodes (SBD)
|
| File Size |
67.36K /
3 Page |
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it Online |
Download Datasheet
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Matsshita / Panasonic
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| Part No. |
MA6Z718
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| OCR Text |
... Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time Detection efficiency
*
1
2
3
Conditions VR =...1V
3.0
Ct VR
1 000 300
IF(surge) tW
Ta = 25C IF(surge) tW 100 30 10 3 1 0.3
2.5
Rev... |
| Description |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
| File Size |
66.40K /
3 Page |
View
it Online |
Download Datasheet |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
MA3J741E MA3J741D
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| OCR Text |
... Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 M...1V
10
1
1
10-1
0
0
5
10
15
20
25
30
10-2 -40
0
40
80... |
| Description |
Silicon epitaxial planar type
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| File Size |
45.68K /
2 Page |
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it Online |
Download Datasheet |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
MA2C700A MA2C700 MA700 MA700A
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| OCR Text |
...0 MA2C700A Forward voltage (DC) VF1 VF2 Terminal capacitance Reverse recovery time * Detection efficiency Ct trr Symbol IR VR = 15 V VR = 3...1V
2.0
1.6
103 75C 102
103
1.2
102
0.8
10
25C
10
0.4
1
0
5... |
| Description |
From old datasheet system
Schottky Barrier Diodes (SBD)
Silicon epitaxial planar type
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| File Size |
69.07K /
3 Page |
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it Online |
Download Datasheet |
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|
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
MA3J745E
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| OCR Text |
... Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Detection efficiency Ct trr VR = 30 V IF = 1 mA IF = 30...1V
2.0 1.6 1.2 0.8 0.4 0
Reverse current IR (A)
0 5 10 15 20 25 30
2.4
102
10
1
... |
| Description |
Silicon epitaxial planar type
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| File Size |
45.13K /
2 Page |
View
it Online |
Download Datasheet |
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|
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Matsshita / Panasonic
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| Part No. |
MA3J745E MA3J745D MA745WA MA745WK
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| OCR Text |
... Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time Detection efficiency
*
D
Conditions VR = 30 V IF = 1...1V
Terminal capacitance Ct (pF)
103
VR = 30 V
2.4 2.0 1.6 1.2 0.8 0.4
102
10
1
... |
| Description |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
| File Size |
65.60K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
PANASONIC[Panasonic Semiconductor]
|
| Part No. |
MA3J745
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| OCR Text |
... Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 M...1V
2.0 1.6 1.2 0.8 0.4 0
Reverse current IR (A)
0 5 10 15 20 25 30
2.4
102
10
1
... |
| Description |
Silicon epitaxial planar type
|
| File Size |
42.66K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
Matsshita / Panasonic
|
| Part No. |
MA3J745
|
| OCR Text |
... Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 M...1V
2.0 1.6 1.2 0.8 0.4 0
Reverse current IR (A)
0 5 10 15 20 25 30
2.4
102
10
1
... |
| Description |
Schottky Barrier Diodes (SBD)
|
| File Size |
65.81K /
3 Page |
View
it Online |
Download Datasheet |
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|
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
MA3X715
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| OCR Text |
...arameter Forward voltage Symbol VF1 VF2 Reverse current Terminal capacitance Reverse recovery time Detection efficiency
*
Conditions IF ...1V
Terminal capacitance Ct (pF)
103
VR = 30 V
1.0
10
Forward surge current IF(surg... |
| Description |
Silicon epitaxial planar type
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| File Size |
79.56K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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