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POWEREX[Powerex Power Semiconductors]
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Part No. |
CM350DU-5F
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Description |
trench gate design Dual igbtmod 350 Amperes/250 Volts trench gate design Dual igbtmod⑩ 350 Amperes/250 Volts trench gate design Dual igbtmod350 Amperes/250 Volts
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File Size |
53.22K /
4 Page |
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it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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Part No. |
CM450HA-5F
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Description |
trench gate design Single igbtmod 450 Amperes/250 Volts trench gate design Single igbtmod⑩ 450 Amperes/250 Volts
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File Size |
75.76K /
4 Page |
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it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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Part No. |
CM600HU-12F
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Description |
trench gate design Single igbtmod 600 Amperes/600 Volts trench gate design Single igbtmod⑩ 600 Amperes/600 Volts
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File Size |
100.04K /
4 Page |
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it Online |
Download Datasheet |
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Kersemi Electronic Co.,...
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Part No. |
FQB3N60
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Description |
This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
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File Size |
626.58K /
4 Page |
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it Online |
Download Datasheet |
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Powerex, Inc. POWEREX[Powerex Power Semiconductors]
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Part No. |
CM100TJ-12F
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Description |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT trench gate design 100 Amperes/600 Volts
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File Size |
97.94K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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