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surface-mountable Datasheet PDF File

For surface-mountable Found Datasheets File :: 2575 Search Time::2.86ms
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				IRF[International Rectifier]
Part No.	16TTS08FP 16TTS08STRL 16TTS08STRR 16TTS12FP 16TTS12STRL 16TTS12STRR 16TTS16FP 16TTS16STRL 16TTS16STRR 16TTS
OCR Text	surface mountable phase control scr bulletin i2105 rev. d 12/98 safe ir series 16tts..s v t < 1.4v @ 10a i tsm = 200a v rrm = 800 to 1600v www.irf.com major ratings and characteristics d 2 pak (smd-220) i t(av) sinusoidal 10 a wavefor...
Description	SURFACE MOUNTABLE PHASE CONTROL SCR PHASE CONTROL SCR TO-220 FULLPAK
File Size	98.39K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	25TTS08S 25TTS08STRL 25TTS08STRR 25TTS12S 25TTS12STRL 25TTS12STRR 25TTS 25TTS08STR 25TTS12STR
OCR Text	SURFACE MOUNTABLE PHASE CONTROL SCR Description/Features The 25TTS..S new series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used h...
Description	SURFACE MOUNTABLE PHASE CONTROL SCR
File Size	206.62K / 7 Page	View it Online	Download Datasheet

				IXYS, Corp. IXYS[IXYS Corporation]
Part No.	IXFTN100 IXFX15N100 IXFH14N100 IXFHN100 IXFX14N100 IXFT14N100 IXFT15N100
OCR Text	...pring (PLUS 247TM) q High power surface mountable package q High power density 97535B (1/99) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.5 4.5 100 TJ = 25C TJ = 125C 25...
Description	HiPerFET Power MOSFETs 14 A, 1000 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	115.80K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	20ETF02S 20ETF02STRL 20ETF02STRR 20ETF06S 20ETF06STRL 20ETF06STRR 20ETF12 20ETF10 20ETF 20ETF04S 20ETF04STRL 20ETF04STRR 20ETF08
OCR Text	SURFACE MOUNTABLE FAST SOFT RECOVERY RECTIFIER DIODE VF < 1.2V @ 10A IFSM = 300A VRRM 200 to 600V Description/Features The 20ETF..S soft recovery rectifier QUIETIR series has been optimized for combined short reverse recovery time an...
Description	SURFACE MOUNTABLE FAST SOFT RECOVERY RECTIFIER DIODE
File Size	200.87K / 8 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20077
OCR Text	...ions. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is sta...Mountable Available in Tape and Reel Typical Output Power vs. Input Power 1.2 Output Power (W...
Description	0.7 Watts, 1525660 MHz INMARSAT RF Power Transistor 0.7 Watts, 1525-1660 MHz INMARSAT RF Power Transistor 0.7 Watts 1525-1660 MHz INMARSAT RF Power Transistor
File Size	170.38K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20078
OCR Text	...ions. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceab...Mountable Available in Tape and Reel Typical Output Power vs. Input Power 4.5 Output Power (W...
Description	2.5 Watts, 1525660 MHz INMARSAT RF Power Transistor 2.5 Watts, 1525-1660 MHz INMARSAT RF Power Transistor 2.5瓦，16250年国际海事卫星组织兆赫射频功率晶体管
File Size	192.07K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20145
OCR Text	...ions. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceab...Mountable Available in Tape and Reel Typical Output Power vs. Input Power 12 10 8 6 4 2 0 0.00 ...
Description	9 Watts, 91560 MHz Cellular Radio RF Power Transistor 9 Watts, 915-960 MHz Cellular Radio RF Power Transistor 9瓦，915-960兆赫蜂窝无线电射频功率晶体管
File Size	41.43K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20146
OCR Text	...ions. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceab...Mountable Available in Tape and Reel Typical Output Power vs. Input Power 1.0 VCC = 26 V Outp...
Description	0.4 Watt, 1.8.0 GHz Cellular Radio RF Power Transistor 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor 0.4 Watt/ 1.8-2.0 GHz Cellular Radio RF Power Transistor
File Size	38.87K / 2 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20147
OCR Text	...ions. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceab...Mountable Available in Tape and Reel Typical Output Power vs. Input Power 6 5 4 3 2 1 0 0 0.1 0....
Description	2.5 Watts, 1.8.0 GHz Cellular Radio RF Power Transistor 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor
File Size	384.59K / 2 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20179
OCR Text	...ions. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceab...Mountable Available in Tape and Reel Typical Output Power vs. Input Power 1.0 Output Power (W...
Description	0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor
File Size	200.86K / 3 Page	View it Online	Download Datasheet

For surface-mountable Found Datasheets File :: 2575 Search Time::2.86ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |