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For self-refresh Found Datasheets File :: 6944    Search Time::1.281ms    
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    MT48LC8M16A2 MT48LC8M16A2TG-6A

MICRON[Micron Technology]
Part No. MT48LC8M16A2 MT48LC8M16A2TG-6A
OCR Text ...HARGE, and Auto Refresh Modes * Self Refresh Mode; standard and low power * LVTTL-compatible inputs and outputs * Single +3.3V 0.3V power supply * 64ms, 4,096-cycle refresh MT48LC8M16A2 - 2 MEG X 16 X 4 BANKS For the latest data sheet, ...
Description SYNCHRONOUS DRAM

File Size 37.23K  /  4 Page

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    V53C318165A V53C318165A50 V53C318165A60 V53C318165A70

MOSEL[Mosel Vitelic, Corp]
Part No. V53C318165A V53C318165A50 V53C318165A60 V53C318165A70
OCR Text ...AS Refresh, Hidden Refresh, and Self Refresh. s Refresh Interval: 1024 cycles/16 ms s Available in 42-pin 400 mil SOJ and 50/44-pin 400 mil TSOP-II s Single +3.3 V 0.3 V Power Supply s TTL Interface Description The V53C318165A is a 1048...
Description 3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM

File Size 266.08K  /  18 Page

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    EM658160 EM658160TS-33 EM658160TS-35 EM658160TS-4 EM658160TS-5 EM658160TS-6 EM658160TS-7 EM658160TS-8

ETRON[Etron Technology, Inc.]
ETRON[Etron Technology Inc.]
Part No. EM658160 EM658160TS-33 EM658160TS-35 EM658160TS-4 EM658160TS-5 EM658160TS-6 EM658160TS-7 EM658160TS-8
OCR Text ... Latency = 0 * Auto Refresh and Self Refresh * 4096 refresh cycles / 64ms * Precharge & active power down * Power supplies: VDD = 3.3V 0.3V VDDQ = 2.5V 0.2V * Interface: SSTL_2 I/O Interface * Package: 66 Pin TSOP II, 0.65mm pin pitch * *...
Description 4M x 16 DDR Synchronous DRAM (SDRAM)

File Size 154.94K  /  26 Page

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    K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text ...resh capabilities. Furthermore, self-refresh operation is available in L-version. This 4Mx4 EDO DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be...
Description 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

File Size 254.50K  /  21 Page

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    K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text ...resh capabilities. Furthermore, self-refresh operation is available in L-version. This 4Mx4 Fast Page Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability...
Description 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode

File Size 223.25K  /  20 Page

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    K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text ...resh capabilities. Furthermore, self-refresh operation is available in L-version. This 1Mx16 Fast Page Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reliabilit...
Description 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle.
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.

File Size 525.70K  /  34 Page

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    KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text ...refresh) RAS pulse width (C-B-R self refresh) RAS precharge time (C-B-R self refresh) CAS hold time (C-B-R self refresh) Symbol Min -45 Max 64 64 0 32 67 43 48 5 10 5 26 31 70 9 45 28 12 12 0 12 10 15 10 10 100 80 -50 13 13 0 13 10 15 10 10...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns

File Size 826.10K  /  35 Page

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    KM416C4000C KM416C4100C KM416C4000CS-5

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text ...refresh) RAS pulse width (C-B-R self refresh) RAS precharge time (C-B-R self refresh) CAS hold time (C-B-R self refresh) Symbol Min -5 Max 64 64 0 36 73 48 53 5 10 5 30 35 76 10 50 30 13 13 0 13 10 15 10 10 100 90 -50 13 13 0 15 10 15 10 10...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns

File Size 898.34K  /  35 Page

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    KM416C4004C KM416C4104C KM416C4004CS-5

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416C4004C KM416C4104C KM416C4004CS-5
OCR Text ...e cycle) RAS pulse width (C-B-R self refresh) RAS precharge time (C-B-R self refresh) CAS hold time (C-B-R self refresh) Symbol Min -5 Max Min 10 64 64 0 30 67 42 5 10 5 28 20 47 8 50 30 13 13 45 3 13 10 10 10 10 5 3 3 15 5 5 5 5 100 90 -50...
Description 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns

File Size 943.13K  /  36 Page

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    MB81ES123245-10

Fujitsu Component Limited.
Part No. MB81ES123245-10
OCR Text ...urrent (max) (i dd2ps ) 0.5 ma self-refresh current (max) tj = + 35 c max 200 a mb81es123245-10 2 features ?1 m word 32 bit 4 banks organization low power supply - v dd : + 1.7 v to + 1.9 v - v ddq : + 1.7 v to + 1....
Description 128 M-BIT (4-BANK × 1 M-WORD × 32-BIT) SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP

File Size 193.69K  /  42 Page

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