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Macronix International Co., Ltd.
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Part No. |
MX29LV640BUXBI-90G MX29LV640BUTI-12G MX29LV640BUTC-12
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OCR Text |
... protected, it is prohibited to pro- gram or erase within the sector again. single power supply operation - 2.7 to 3.6 volt for read, eras...electron in- jection. during a program cycle, the state-machine will control the program sequences a... |
Description |
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA63 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 120 ns, PDSO48
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File Size |
516.89K /
64 Page |
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it Online |
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Spansion, Inc.
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Part No. |
AM29SL400DT90WAD AM29SL400DB100WAF AM29SL400DT90WAC
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OCR Text |
...rations. the device can also be pro- grammed in standard eprom programmers. the standard device offers access times of 90, 100, and 120 ns, ...electron injection.
april 13, 2005 rev. a amend. +1 am29sl400d 3 advance information table of con... |
Description |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 90 ns, PBGA48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 100 ns, PBGA48
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File Size |
503.79K /
41 Page |
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Macronix
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Part No. |
MX29LV065B
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OCR Text |
...oup protect function to prevent pro gram or erase operation in the protected sector group - provides chip unprotected function to allow code...electron injec- tion. during a program cycle, the state-machine will control the program sequences a... |
Description |
64M-Bit CMOS Flash Memory
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File Size |
524.43K /
63 Page |
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it Online |
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http://
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Part No. |
M59BW102
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OCR Text |
...ctrically at the chip level and pro- grammed in-system on a word-by-word basis us- ing only a single 3v v cc supply. for program and erase ...electron- ic signature), write command, output disable, standby. see tables 3 and 4.
3/24 m59bw102... |
Description |
1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
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File Size |
184.08K /
24 Page |
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it Online |
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Advanced Micro Devices, Inc.
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Part No. |
AM29LV200BB-70DFC AM29LV200BB-70DWI AM29LV200BB-90DPI AM29LV200BB-90DTC AM29LV200BB-70DRI AM29LV200BB-90DFC AM29LV200BB-70DPC AM29LV200BB-70DPI AM29LV200BB-70DTC AM29LV200BB-70DWC AM29LV200BB-90DFI AM29LV200BB-90DRC AM29LV200BB-70DRC AM29LV200BB-90DPC AM29LV200BB-90DRI AM29LV200BB-90DWC AM29LV200BB-70DFI AM29LV200BB-90DTI AM29LV200BB-70DTI AM29LV200BB35DTI1 AM29LV200BT35DTI1 AM29LV200BB-120DRI AM29LV200BB-60RDRI AM29LV200BB-120DRC AM29LV200BB-60RDTC AM29LV200BT-120DRI AM29LV200BT-120DRC AM29LV200BB-60RDPI AM29LV200BB-60RDWC AM29LV200BB-60RDTI AM29LV200BB-120DTI AM29LV200BT-120DTI AM29LV200BB-60RDFI AM29LV200BT-120DWI AM29LV200BB-120DTC AM29LV200BB-120DWI AM29LV200BB-60RDWI AM29LV200BT-120DTC AM29LV200BB-60RDRC AM29LV200BB-60RDFC AM29LV200BT-70DWI AM29LV200BB-90DWI AM29LV200BT-60RDWI AM29LV200BB-60RDPC AM29LV200BB-70RDFE AM29LV200BT-60RDTC AM29LV200BT-60RDFC AM29LV200BT-60RDPC AM29LV200BT-60RDPI AM29LV200BT-60RDRC AM29LV200BT-60RDRI AM29LV200BT-60RDFI AM29LV200BB-120DFC AM29LV200BB-120DPC AM29LV200BB-120DFI AM29LV200BB-120DPI AM29LV200BB30DTI1 AM29LV200BB30DFI1 AM29LV200BB30DPI1 AM29LV200BB35DFI1 AM29LV200BB35DPI1 AM29LV200BB35DWI1 AM29LV200BB50DWI1 AM29LV200BB30DWI1 AM29LV200BB50DR
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OCR Text |
...rations. the device can also be pro- grammed in standard eprom programmers. the device is entirely command set compatible with the jedec sin...electron injec- tion. electrical specifications refer to the am29lv200b data sheet, for full electri... |
Description |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 70 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 90 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 60 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56亩x 8-Bit/128亩x 16位).0伏的CMOS只,引导扇区快闪记忆体,修编模具1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56x 8-Bit/128x 16位).0伏的CMOS只,引导扇区快闪记忆体,修编模具1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 120 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位256亩x 8-Bit/128亩x 16位).0伏的CMOS只,引导扇区快闪记忆体,修编模具1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56亩x 8-Bit/128亩x 16位)3.0伏的CMOS只,引导扇区快闪记忆体,修编模具1
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File Size |
189.60K /
11 Page |
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it Online |
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Atmel, Corp.
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Part No. |
K8P2815UQB-DC4C0
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OCR Text |
...locks with independent hardware pro- tection. this block architecture provides highly flexible erase and program capability. the k8 p2815uq...electron (che) inject ion mechanism which is used to program eproms. the device is erased elec trica... |
Description |
8M X 16 FLASH 2.7V PROM, 65 ns, PBGA64 13 X 11 MM, 1 MM PITCH, FBGA-80/64
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File Size |
871.83K /
56 Page |
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it Online |
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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Part No. |
AM29BDD160GT54DKI AM29BDD160GB64CKI AM29BDD160GB65AKI AM29BDD160GT65AKI AM29BDD160GB54DKF AM29BDD160GT54DPBE AM29BDD160GT64CKE AM29BDD160GT64CPBE AM29BDD160GB65AKF
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OCR Text |
... remainder may be customer data pro - grammed by amd ? customer lockable: can be read, programmed, or erased just like other sectors. onc...electron injection.
am29bdd160g 3 table of contents product selector guide. . . . . . . . . . ... |
Description |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PQFP80 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位).5伏的CMOS只突发模式,双启动,同步写闪 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
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File Size |
2,131.81K /
80 Page |
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it Online |
Download Datasheet |
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Macronix International Co., Ltd. http://
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Part No. |
MX29LV065XBC-90 MX29LV065XBI-90 MX29LV065TC-90 MX29LV065TC-12
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OCR Text |
...oup protect function to prevent pro gram or erase operation in the protected sector group - provides chip unprotected function to allow code...electron injec- tion. during a program cycle, the state-machine will control the program sequences a... |
Description |
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY 8M X 8 FLASH 2.7V PROM, 120 ns, PDSO48 64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY 8M X 8 FLASH 2.7V PROM, 90 ns, PDSO48
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File Size |
760.36K /
64 Page |
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it Online |
Download Datasheet |
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Price and Availability
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