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For pro-electron Found Datasheets File :: 362    Search Time::3.329ms    
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    Macronix International Co., Ltd.
Part No. MX29LV640BUXBI-90G MX29LV640BUTI-12G MX29LV640BUTC-12
OCR Text ... protected, it is prohibited to pro- gram or erase within the sector again.  single power supply operation - 2.7 to 3.6 volt for read, eras...electron in- jection. during a program cycle, the state-machine will control the program sequences a...
Description 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA63
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 120 ns, PDSO48

File Size 516.89K  /  64 Page

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    Spansion, Inc.
Part No. AM29SL400DT90WAD AM29SL400DB100WAF AM29SL400DT90WAC
OCR Text ...rations. the device can also be pro- grammed in standard eprom programmers. the standard device offers access times of 90, 100, and 120 ns, ...electron injection. april 13, 2005 rev. a amend. +1 am29sl400d 3 advance information table of con...
Description 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 90 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 100 ns, PBGA48

File Size 503.79K  /  41 Page

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    Macronix
Part No. MX29LV065B
OCR Text ...oup protect function to prevent pro gram or erase operation in the protected sector group - provides chip unprotected function to allow code...electron injec- tion. during a program cycle, the state-machine will control the program sequences a...
Description 64M-Bit CMOS Flash Memory

File Size 524.43K  /  63 Page

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    http://
Part No. M59BW102
OCR Text ...ctrically at the chip level and pro- grammed in-system on a word-by-word basis us- ing only a single 3v v cc supply. for program and erase ...electron- ic signature), write command, output disable, standby. see tables 3 and 4. 3/24 m59bw102...
Description 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory

File Size 184.08K  /  24 Page

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    Advanced Micro Devices, Inc.
Part No. AM29LV200BB-70DFC AM29LV200BB-70DWI AM29LV200BB-90DPI AM29LV200BB-90DTC AM29LV200BB-70DRI AM29LV200BB-90DFC AM29LV200BB-70DPC AM29LV200BB-70DPI AM29LV200BB-70DTC AM29LV200BB-70DWC AM29LV200BB-90DFI AM29LV200BB-90DRC AM29LV200BB-70DRC AM29LV200BB-90DPC AM29LV200BB-90DRI AM29LV200BB-90DWC AM29LV200BB-70DFI AM29LV200BB-90DTI AM29LV200BB-70DTI AM29LV200BB35DTI1 AM29LV200BT35DTI1 AM29LV200BB-120DRI AM29LV200BB-60RDRI AM29LV200BB-120DRC AM29LV200BB-60RDTC AM29LV200BT-120DRI AM29LV200BT-120DRC AM29LV200BB-60RDPI AM29LV200BB-60RDWC AM29LV200BB-60RDTI AM29LV200BB-120DTI AM29LV200BT-120DTI AM29LV200BB-60RDFI AM29LV200BT-120DWI AM29LV200BB-120DTC AM29LV200BB-120DWI AM29LV200BB-60RDWI AM29LV200BT-120DTC AM29LV200BB-60RDRC AM29LV200BB-60RDFC AM29LV200BT-70DWI AM29LV200BB-90DWI AM29LV200BT-60RDWI AM29LV200BB-60RDPC AM29LV200BB-70RDFE AM29LV200BT-60RDTC AM29LV200BT-60RDFC AM29LV200BT-60RDPC AM29LV200BT-60RDPI AM29LV200BT-60RDRC AM29LV200BT-60RDRI AM29LV200BT-60RDFI AM29LV200BB-120DFC AM29LV200BB-120DPC AM29LV200BB-120DFI AM29LV200BB-120DPI AM29LV200BB30DTI1 AM29LV200BB30DFI1 AM29LV200BB30DPI1 AM29LV200BB35DFI1 AM29LV200BB35DPI1 AM29LV200BB35DWI1 AM29LV200BB50DWI1 AM29LV200BB30DWI1 AM29LV200BB50DR
OCR Text ...rations. the device can also be pro- grammed in standard eprom programmers. the device is entirely command set compatible with the jedec sin...electron injec- tion. electrical specifications refer to the am29lv200b data sheet, for full electri...
Description 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 70 ns, UUC43
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 90 ns, UUC43
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 60 ns, UUC43
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56亩x 8-Bit/128亩x 16位).0伏的CMOS只,引导扇区快闪记忆体,修编模具1
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56x 8-Bit/128x 16位).0伏的CMOS只,引导扇区快闪记忆体,修编模具1
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 120 ns, UUC43
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位256亩x 8-Bit/128亩x 16位).0伏的CMOS只,引导扇区快闪记忆体,修编模具1
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56亩x 8-Bit/128亩x 16位)3.0伏的CMOS只,引导扇区快闪记忆体,修编模具1

File Size 189.60K  /  11 Page

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    Atmel, Corp.
Part No. K8P2815UQB-DC4C0
OCR Text ...locks with independent hardware pro- tection. this block architecture provides highly flexible erase and program capability. the k8 p2815uq...electron (che) inject ion mechanism which is used to program eproms. the device is erased elec trica...
Description 8M X 16 FLASH 2.7V PROM, 65 ns, PBGA64 13 X 11 MM, 1 MM PITCH, FBGA-80/64

File Size 871.83K  /  56 Page

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    Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
Part No. AM29BDD160GT54DKI AM29BDD160GB64CKI AM29BDD160GB65AKI AM29BDD160GT65AKI AM29BDD160GB54DKF AM29BDD160GT54DPBE AM29BDD160GT64CKE AM29BDD160GT64CPBE AM29BDD160GB65AKF
OCR Text ... remainder may be customer data pro - grammed by amd ? customer lockable: can be read, programmed, or erased just like other sectors. onc...electron injection. am29bdd160g 3 table of contents product selector guide. . . . . . . . . . ...
Description 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位).5伏的CMOS只突发模式,双启动,同步写闪
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80

File Size 2,131.81K  /  80 Page

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    Macronix International Co., Ltd.
http://
Part No. MX29LV065XBC-90 MX29LV065XBI-90 MX29LV065TC-90 MX29LV065TC-12
OCR Text ...oup protect function to prevent pro gram or erase operation in the protected sector group - provides chip unprotected function to allow code...electron injec- tion. during a program cycle, the state-machine will control the program sequences a...
Description 64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY 8M X 8 FLASH 2.7V PROM, 120 ns, PDSO48
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY 8M X 8 FLASH 2.7V PROM, 90 ns, PDSO48

File Size 760.36K  /  64 Page

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    Macronix International Co., Ltd.
http://
Part No. MX26LV800BXBC-70G MX26LV800TXBC-70G MX26LV800BXBC-55G MX26LV800TXBC-55G MX26LV800TXEC-70 MX26LV800TXEC-55
OCR Text ...tary non-epi process. latch-up pro- tection is proved for stresses up to 100 milliamperes on address and data pin from -1v to vcc + 1v. mac...electron injection. during a program cycle, the state-machine will control the program sequences and...
Description 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PBGA48

File Size 560.03K  /  48 Page

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For pro-electron Found Datasheets File :: 362    Search Time::3.329ms    
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