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  power-mos Datasheet PDF File

For power-mos Found Datasheets File :: 31649    Search Time::9.297ms    
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    2SK3112 2SK3112-S 2SK3112-ZJ 2SK3112-Z

NEC Corp.
Part No. 2SK3112 2SK3112-S 2SK3112-ZJ 2SK3112-Z
OCR Text POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3112 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuat...
Description SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
MOS FET

File Size 77.46K  /  8 Page

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    2SK3402-Z 2SK3402

NEC[NEC]
Part No. 2SK3402-Z 2SK3402
OCR Text POWER MOS FET DESCRIPTION The 2SK3402 is N-Channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3402 2SK3402-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES...
Description Nch power MOS FET
SWITCHING N-CHANNEL POWER MOSFET

File Size 127.51K  /  8 Page

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    APT30M85BVR APT30M85

ADPOW[Advanced Power Technology]
Part No. APT30M85BVR APT30M85
OCR Text POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achiev...
Description POWER MOS V 300V 40A 0.085 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 64.67K  /  4 Page

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    APT30M85 APT30M85BVFR

Advanced Power Technology, Ltd.
Part No. APT30M85 APT30M85BVFR
OCR Text POWER MOS V (R) FREDFET TO-247 Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 300V 40A 0.085 Ohm

File Size 69.32K  /  4 Page

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    Panasonic
Part No. K758
OCR Text power f-mos fets 2sk758 2sk758 silicon n-channel power f-mos n features l low on-resistance r ds(on) : r ds(on) = 0.45 w (typ) l high-speed switching : t f = 45ns(typ) l no secondary breakdown n applications l dc-dc converter...
Description 2SK758

File Size 45.34K  /  2 Page

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    2SK2211

Panasonic Semiconductor
Part No. 2SK2211
OCR Text ...) * High-speed switching * Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packin...MOS FETs (Small Signal) ID VDS 1.6 RDS VDS Drain to source ON-resistance RDS(ON) () VDS =10...
Description Silicon N-Channel MOS FET

File Size 32.16K  /  2 Page

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    Digitron Semiconductors
Part No. MFE211 MFE212
OCR Text ...ontinuous i d 50 madc total power dissipation @ t a = 25c derate above 25c p d 360 2.4 mw mw/c total power dissipation @ t c =...mos field effect transistors electrical characteristics (t a = 25c unless otherwise noted) char...
Description N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS

File Size 1,131.56K  /  5 Page

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    RD09MUP2

Mitsubishi Electric Semiconductor
Part No. RD09MUP2
OCR Text POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD09MUP2 (a) 0.2+/-0.05 8.0+/-0.2 0.65+/-0.2 (c) (b) (b) 7.0+/-0.2 6.2+/-0.2 5.6+/-0.2 4.2+/-0.2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W...
Description Silicon MOSFET Power Transistor, 520MHz, 8W

File Size 148.99K  /  7 Page

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    US5U291 US5U29

ROHM[Rohm]
Part No. US5U291 US5U29
OCR Text ...Body diode) Channel temperature Power dissipation <Di> Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation <MOSFET AND Di> Total power dissipation Range of Storag...
Description 2.5V Drive Pch SBD MOS FET

File Size 76.27K  /  5 Page

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