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SGS Thomson Microelectronics
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| Part No. |
STU16NC50
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| OCR Text |
max220 PowerMeshTM II MOSFET
TYPE STU16NC50
s s s s s
VDSS 500V
RDS(on) < 0.27
ID 16 A
TYPICAL RDS(on) = 0.22 EXTREMELY HIGH d...I D = 20 A, VGS = 10V Test Conditions VDD = 250V, I D = 10 A RG = 4.7 VGS = 10V (see test circuit, F... |
| Description |
N-CHANNEL 500V 0.22 OHM 16A max220 POWERMESH II MOSFET
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| File Size |
85.10K /
8 Page |
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ST Microelectronics
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| Part No. |
STU10NA50
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| OCR Text |
... the max220 tm package is a new high volume power package exibiting the same footprint as the industry standard...i d stu10na50 500 v < 0.6 w 10.2 a october 1997 1 2 3 max220 tm absolute maximum ratings symbol p... |
| Description |
N-Channel Enhancement Mode Fast Power MOS Transistor
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| File Size |
79.49K /
5 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STU10NC70Z STU10NC70ZI
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| OCR Text |
max220/i-max220 zener-protected powermesh ? iii mosfet n typical r ds (on) = 0.58 w n extremely high dv/dt capability n gate-to-source zener diodes n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized descriptio... |
| Description |
N-Channel MOSFET
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| File Size |
144.33K /
10 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STU36NB20
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| OCR Text |
... SUPPLIES AND MOTOR DRIVE
s
max220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM (*) P t ot dv/dt(1) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate... |
| Description |
N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
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| File Size |
56.72K /
6 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STU14NA50
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| OCR Text |
...
max220TM
DESCRIPTION
The max220 TM package is a new high volume power package exibiting the same footprint as the industry standard T...I DM (*) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) ... |
| Description |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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| File Size |
71.19K /
5 Page |
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it Online |
Download Datasheet |
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