| Description |
16KBit, 8KBit, 4KBit, 2KBit and 1KBit Serial I2C Bus EEPROM<Br>45 V, 100 mA NPN general-purpose transistors<Br>General purpose PIN diode<Br>12-Bit, 2.5 us Dual DAC, Serial Input, PgrmaBle Settling Time, Simultaneous Update, Low Power 8-CDIP -55 to 125<Br>8-Bit Constant-Current LED Sink Driver 16-TSSOP -40 to 125<Br>Removal Tool, Han D; RoHS Compliant:N/A RoHS Compliant: Yes<Br>CRIMP SET 0.14 - 0.50MM ;<Br>NPN 1 GHz wideBand transistor - @ f: 500 MHz; @ f1: 500 ; fB>TB>: 1 GHz; Frequency: 4.5 MHz; IB>CB>: 25 mA; Noise figure: 4.5@f1 dB; PB>totB>: 300 mW; Polarity: NPN ; VCEO max: 15 V<Br>16-Channel LED Driver 100-HTQFP -20 to 85<Br>8-Bit Constant-Current LED Sink Driver 16-SOIC -40 to 125<Br>8-Bit, 10 us Quad DAC, Serial Input, PgrmaBle for 1x or 2x Output, Simultaneous Update, Low Power 14-SOIC -40 to 85<Br>Microprocessor Crystal; Frequency:20MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process CompatiBle:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes<Br>8-Bit, 10 us Quad DAC, Serial Input, PgrmaBle for 1x or 2x Output, Simultaneous Update, Low Power 14-PDIP -40 to 85<Br>ER 4C 4#4 PIN RECP WALL<Br>8-Bit, 10 us Octal DAC, Serial Input, PgrmaBle for 1x or 2x Output, Simultaneous Update, Low Power 16-SOIC 0 to 70<Br>Power LDMOS transistor<Br>Three quadrant triacs guaranteed commutation - IB>GTB>: 25 mA; IB>TB> (RB>MSB>): 16 A; VB>DRMB>: 600 V<Br>18-Bit Registered Transceiver With 3-State Outputs 56-SSOP -40 to 85<Br>45 V, 500 mA PNP general purpose transistors - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; IB>CB> max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V<Br>ER 4C 4#4 SKT RECP WALL<Br>Replaced By TLV5734 : 8-Bit, 20 MSPS ADC Triple Ch., Digital Clamp for YUV/NTSC/PAL, Output Data Format Mux, Low Power 64-LQFP -20 to 75<Br>8-Bit, 10 us Octal DAC, Serial Input, PgrmaBle for 1x or 2x Output, Simultaneous Update, Low Power 16-SOIC -40 to 85<Br>NPN 1 GHz wideBand transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1 GHz; Frequency: 4.5 MHz; IC: 25 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; VCEO max: 15 V<Br>Dual N-channel dual gate MOSFET - ID: 30 mA; IDSS: 100 (max) mA; VDSmax: 6 V<Br>ER 23C 16 12 8 4 PIN RECP WALL<Br>D87 - CONNECTOR ACCESSORY<Br>ER 5C 3#12 2#0 SKT RECP WALL<Br>Silicon planar diode - Cd max.: 1.0@VR=20V pF; IF max: 100 mA; RD @ IF=5 mA AND F=200 MHz max: 0.7 Ohm; RS max: 0.7 ; VR max: 35 V<Br>Triple high-speed switching diodes - Cd max.: 1.5 pF; Configuration: triple isolated ; IF max: 200 mA; IFSM max: 4.5 A; IR max: 1000@VR=75V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V<Br>NPN 5 GHz wideBand transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; System frequency: 9<Br>P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; ID DC: 0.2 A; RDS(on): 12000@10V mOhm; VDSmax: 240 V<Br>Removal Tool Han E Crimpcontacts in E Mo; RoHS Compliant:N/A<Br>PNP 5 GHz wideBand transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 70 mA; fT: 5 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 100 mA; Ptot: 1000 mW; Polarity: PNP ; VCE: 10 V; VB<Br>Three quadrant triacs guaranteed commutation - IGT: 25 mA; IT (RMS): 16 A; VDRM: 600 V<Br>PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 0.7 A; NumBer of pins: 3 ; RDS(on): 0.2 mOhm; VDSmax: 50 V<Br>Silicon RF switches - [S21(Off)]2 min: 30 ; [S21(On)]2 max: 3 ; ID: 10 mA; IGSS max: 100 nA; Mode: depl. ; RDS(on): 20 Ohm; S21(off): 30 dB; S21(on): 3 dB; VDSmax: 3 V; VSG max: 7 V<Br>Schottky Barrier douBle diodes - Cd max.: 60@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V<Br>High-speed douBle diode - Cd max.: 2.5 pF; Configuration: dual isolated ; IF max: 200 mA; IFSM max: 9 A; IR max: 100@VR=60V nA; IFRM: 600 mA; trr max: 6 ns; VFmax: 1@IF=200mA mV; VR max: 60 V<Br>Schottky Barrier douBle diodes - Cd max.: 60@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V<Br>High-speed diode - Cd max.: 1 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1000@VR=75V nA; IFRM: 500 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 75 V<Br>NPN general purpose douBle transistor - Description: Current Mirror<Br>ER 30C 24#16 6#12 SKT RECP WAL<Br>45 V, 500 mA PNP general purpose transistors - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V<Br>ER 35C 28#16 7#12 SKT RECP WAL<Br>ER 35C 28#16 7#12 PIN RECP WAL<Br>Dual high-voltage switching diodes<Br>The CAT24FC02 is a 2-kB Serial CMOS EEPROM internally organized as 256 words of 8 Bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS<Br>PowerMOS transistor TOPFET high side switch 16KBitKBitKBitKBitKBit串行I2C总线的EEPROM<Br>The CAT24FC02 is a 2-kB Serial CMOS EEPROM internally organized as 256 words of 8 Bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS<Br>CONNECTOR ACCESSORY 连接器附<Br>8-Bit, 10 us Quad DAC, Serial Input, PgrmaBle for 1x or 2x Output, Simultaneous Update, Low Power 14-SOIC 0 to 70 16KBitKBitKBitKBitKBit串行I2C总线的EEPROM<Br>Replaced By TLC5733A : 20 MSPS 3-Ch. ADC with Clamp 64-LQFP -20 to 75 16KBitKBitKBitKBitKBit串行I2C总线的EEPROM<Br>TOPFET high side switch SMD version 16KBitKBitKBitKBitKBit串行I2C总线的EEPROM<Br>The CAT24FC02 is a 2-kB Serial CMOS EEPROM internally organized as 256 words of 8 Bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS<Br>The CAT24FC02 is a 2-kB Serial CMOS EEPROM internally organized as 256 words of 8 Bits each CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS<Br>Silicon Bi-directional Trigger Device 16KBitKBitKBitKBitKBit串行I2C总线的EEPROM<Br>The CAT24FC02 is a 2-kB Serial CMOS EEPROM internally organized as 256 words of 8 Bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS<Br>For Use With:Harting Han D Contacts; Crimp Tool:Service Crimping Tool with Locator; Wire Size (AWG):26-16; Leaded Process CompatiBle:Yes 16KBitKBitKBitKBitKBit串行I2C总线的EEPROM<Br>The CAT24FC02 is a 2-kB Serial CMOS EEPROM internally organized as 256 words of 8 Bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS<Br>
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