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Part No. |
IRGC3B60KB
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OCR Text |
...18v min, 1.50v max i c = 1a, t j = 25c, v ge = 15v v (br)ces colletor-to-emitter breakdown voltage 600v min t j = 25c, i ces = 1ma, v g...die: widt h bonding pads: sk = source kelvin is = currentsense g = gat e s = source e = emitter... |
Description |
600 V, N-CHANNEL IGBT
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File Size |
47.54K /
1 Page |
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it Online |
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Vishay
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Part No. |
SIHFZ46
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OCR Text |
...1). b. v dd = 25 v, starting t j = 25 c, l = 34 h, r g = 25 , i as = 54 a (see fig. 12). c. i sd 54 a, di/dt 250 a/s, v dd ...die current = 54 a). product summary v ds (v) 50 r ds(on) ( )v gs = 10 v 0.024 q g (max.) (n... |
Description |
Power MOSFET
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File Size |
689.25K /
8 Page |
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it Online |
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Infineon
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Part No. |
SIDC81D60E6
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OCR Text |
...on and storage temperature t j , t stg - 55...+150 c static electrical characteristics (tested on chip), t j =25 c, unles s otherwise specified value parameter symbol conditions min. typ. max. unit rev... |
Description |
Diodes - HV Chips - SIDC81D60E6, 600V, 200A
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File Size |
62.31K /
4 Page |
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it Online |
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Infineon
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Part No. |
SIDC81D120F6
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OCR Text |
...on and storage temperature t j , t stg - 55...+150 c static electrical characteristics (tested on chip), t j =25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit rev... |
Description |
Diodes - HV Chips - SIDC81D120F6, 1200V, 100A
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File Size |
62.18K /
4 Page |
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it Online |
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Infineon
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Part No. |
SIDC81D120E6
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OCR Text |
...on and storage temperature t j , t stg - 55...+150 c static electrical characteristics (tested on chip), t j =25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit rev... |
Description |
Diodes - HV Chips - SIDC81D120E6, 1200V,100A
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File Size |
62.29K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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