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For j-die Found Datasheets File :: 19515    Search Time::2.328ms    
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    Q65110A2290

OSRAM GmbH
Part No. Q65110A2290
OCR Text ...mperatur junction temperature t j + 125 c durchlassstrom forward current ( t a =25c) i f 20 ma sto?strom surge current t 10 s, d = ...die standardlieferform von serientypen beinhal tet eine untere bzw. obere familiengruppe. diese be s...
Description Hyper-Bright Low Current LED Lead (Pb) Free Product - RoHS Compliant

File Size 287.60K  /  15 Page

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    LEAQ9WP-KZLZ-1 Q65110A9145

OSRAM GmbH
Part No. LEAQ9WP-KZLZ-1 Q65110A9145
OCR Text ...rature sperrschichttemperatur t j 100 c forward current durchlassstrom (t s = 25 c) i f 200 ... 3500 ma forward current pulsed durchlassstr...die standardlieferform von serientypen beinhaltet entweder eine untere familiengruppe, eine obere f...
Description Compact light source in SMT technology, glass window on top, RoHS compliant...
   Compact light source in SMT technology, glass window on top, RoHS compliant...

File Size 766.16K  /  20 Page

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Part No. IRGC3B60KB
OCR Text ...18v min, 1.50v max i c = 1a, t j = 25c, v ge = 15v v (br)ces colletor-to-emitter breakdown voltage 600v min t j = 25c, i ces = 1ma, v g...die: widt h bonding pads: sk = source kelvin is = currentsense g = gat e s = source e = emitter...
Description 600 V, N-CHANNEL IGBT

File Size 47.54K  /  1 Page

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    ZXMC3AMC ZXMC3AMCTA

Diodes Incorporated
Part No. ZXMC3AMC ZXMC3AMCTA
OCR Text ...isture sensitivity: level 1 per j-std-020 ? solderable per mil-std-202, method 208 ? weight: 0.013 grams (approximate) ...die. 8. for dual device with 2 active die running at equal power. 9. thermal resistance from junct...
Description 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

File Size 727.69K  /  11 Page

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    ZXMC3AM832

Zetex Semiconductors
Part No. ZXMC3AM832
OCR Text ... voltage (1) v sd 0.85 0.95 v t j =25c, i s =1.7a, v gs =0v reverse recovery time (3) t rr 17.7 ns t j =25c, i f =2.5a, di/dt= 100a/ s reverse recovery charge (3) q rr 13.0 nc n-channel electrical characteristics (at t amb = 25c unless oth...
Description N & P-channel MOSFET

File Size 309.20K  /  10 Page

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    Vishay
Part No. SIHFZ46
OCR Text ...1). b. v dd = 25 v, starting t j = 25 c, l = 34 h, r g = 25 , i as = 54 a (see fig. 12). c. i sd 54 a, di/dt 250 a/s, v dd ...die current = 54 a). product summary v ds (v) 50 r ds(on) ( )v gs = 10 v 0.024 q g (max.) (n...
Description Power MOSFET

File Size 689.25K  /  8 Page

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    Infineon
Part No. SIDC81D60E6
OCR Text ...on and storage temperature t j , t stg - 55...+150 c static electrical characteristics (tested on chip), t j =25 c, unles s otherwise specified value parameter symbol conditions min. typ. max. unit rev...
Description Diodes - HV Chips - SIDC81D60E6, 600V, 200A

File Size 62.31K  /  4 Page

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    Infineon
Part No. SIDC81D120F6
OCR Text ...on and storage temperature t j , t stg - 55...+150 c static electrical characteristics (tested on chip), t j =25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit rev...
Description Diodes - HV Chips - SIDC81D120F6, 1200V, 100A

File Size 62.18K  /  4 Page

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    Infineon
Part No. SIDC81D120E6
OCR Text ...on and storage temperature t j , t stg - 55...+150 c static electrical characteristics (tested on chip), t j =25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit rev...
Description Diodes - HV Chips - SIDC81D120E6, 1200V,100A

File Size 62.29K  /  4 Page

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