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  impedance material Datasheet PDF File

For impedance material Found Datasheets File :: 22483    Search Time::4.922ms    
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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ...mum Effective Transient Thermal impedance, Junction-to-Case - V DD IRF9520NS/L EAS , Single Pulse Avalanche Energy (mJ) VD S L 400 RG D .U .T IA S VD D A D R IV E R ID -1.7A -2.8A BOTTOM -4.0A TOP 300 -2 0 ...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ...mum Effective Transient Thermal impedance, Junction-to-Case - 10 V DD A 1 IRF9530NS/L 700 EAS , Single Pulse Avalanche Energy (mJ) VDS L 600 RG D .U .T IA S D R IV E R 0 .0 1 VD D A ID -3.4A -5.9A B...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 169.24K  /  10 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ...mum Effective Transient Thermal impedance, Junction-to-Case - V DD IRF9540NS/L 1200 VDS L E A S , S ingle P ulse A valanche E nergy (m J) TO P 1000 B O TTO M ID -4 .7A -8 .1A -11 A RG D .U .T IA S D R IV E R 0 ...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ...mum Effective Transient Thermal impedance, Junction-to-Case www.irf.com - RG VDD A 1 5 IRF9Z24NS/L E A S , S ingle Pulse Avalanc he E nergy (m J) VD S L 250 TOP 200 RG D .U .T IA S D R IV E R 0 .0 1 VD ...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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    IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR

IRF[International Rectifier]
Part No. IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text ...mum Effective Transient Thermal impedance, Junction-to-Case - RG VDD IRF9Z34NS/L VDS E A S , S in g le P u ls e A va la n c h e E n e rg y (m J) L 500 TOP 400 RG -2 0V tp D .U .T IA S 0.0 1 D R IV E R VDD ...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 158.36K  /  10 Page

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    MC74HCU04AD MC74HCU04ADR2 MC74HCU04ADT MC74HCU04ADTR2 MC74HCU04AN MC74HCU04A MC74HCU04A-D

ONSEMI[ON Semiconductor]
Part No. MC74HCU04AD MC74HCU04ADR2 MC74HCU04ADT MC74HCU04ADTR2 MC74HCU04AN MC74HCU04A MC74HCU04A-D
OCR Text ...ications requiring a high-input impedance amplifier. For digital applications, the HC04A is recommended. http://onsemi.com MARKING DIAGRAMS...material CONDITION. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSION B DOES NOT ...
Description Hex Unbuffered Inverter 六角缓冲逆变

File Size 159.13K  /  8 Page

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    MC74HCU04A ON1535 MC74HCU04ADT MC74HCU04AN MC74HCU04AD

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MC74HCU04A ON1535 MC74HCU04ADT MC74HCU04AN MC74HCU04AD
OCR Text ...ications requiring a high-input impedance amplifier. For digital applications, the HC04A is recommended. * Output Drive Capability: 10 LSTTL...material CONDITION. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSION B DOES NOT ...
Description Hex Unbuffered Inverter 六角缓冲逆变
From old datasheet system

File Size 133.30K  /  7 Page

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    MC74HCU04 MC74HCU04D MC74HCU04N ON1537

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MC74HCU04 MC74HCU04D MC74HCU04N ON1537
OCR Text ...ications requiring a high-input impedance amplifier. For digital applications, the HC04 is recommended. * Output Drive Capability: 10 LSTTL ...material CONDITION. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSION B DOES NOT ...
Description From old datasheet system
Hex Unbuffered Inverter

File Size 148.03K  /  5 Page

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    MSM6544 MSM6544GS-2K

OKI electronic componets
OKI electronic components
Part No. MSM6544 MSM6544GS-2K
OCR Text ...e OSC-IN pin is in a high input impedance state, it is susceptible to noise. * DATA-IN This is the display data input. When this pin is at "...material Lead frame material Pin treatment Solder plate thickness Package weight (g) Epoxy resin ...
Description 42-DOT LCD DRIVER

File Size 107.11K  /  12 Page

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    MSM6595 MSM6595A MSM6595A-XXX MSM6595A-XXXRS MSM6595A-XXXJS

OKI electronic components
OKI[OKI electronic componets]
OKI ELECTRIC INDUSTRY CO LTD
Part No. MSM6595 MSM6595A MSM6595A-XXX MSM6595A-XXXRS MSM6595A-XXXJS
OCR Text ...ut pin is always kept in a high-impedance state when RDCK or CS is kept at "H". This pin reflects the "H" or "L" level data being read, and ...material Lead frame material Pin treatment Solder plate thickness Package weight (g) Epoxy resin ...
Description 1-Mbit Serial Voice ROM
From old datasheet system
1M X 1 MASK PROM, PDIP18

File Size 163.28K  /  13 Page

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For impedance material Found Datasheets File :: 22483    Search Time::4.922ms    
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