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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
IRFS510 IRFS510A
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| OCR Text |
...A
BVDSS = 100 V RDS(on) = 0.4 ID = 4.5 A
TO-220F
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current... |
| Description |
Advanced Power MOSFET
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| File Size |
252.17K /
7 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HUF75639S3R4851 FN4854
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| OCR Text |
.... . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... |
| Description |
From old datasheet system 56A 115V 0.025 Ohm N-Channel UltraFET Power MOSFET 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET
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| File Size |
135.46K /
10 Page |
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it Online |
Download Datasheet
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SANYO[Sanyo Semicon Device]
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| Part No. |
MCH6603
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| OCR Text |
...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6
0.15
0.85
Ratings -50 10 -0.14 -0.56 0.8 150 -55 to +150
Unit V... |
| Description |
Ultrahigh-Speed Switching Applications P-Channel Silicon MOSFET
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| File Size |
42.33K /
4 Page |
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it Online |
Download Datasheet
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SANYO[Sanyo Semicon Device]
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| Part No. |
MCH6605
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| OCR Text |
...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6
0.15
0.85
Ratings -50 20 -0.14 -0.56 0.8 150 -55 to +150
Unit V... |
| Description |
Ultrahigh-Speed Switching Applications P-Channel Silicon MOSFET
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| File Size |
41.42K /
4 Page |
View
it Online |
Download Datasheet
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Price and Availability
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