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HFCS60SG 2N6340 TA8110 GSA1576A N4004 EG8542 LT104 FR40K05
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    TE Connectivity, Ltd.
Part No. HY57V28820HCLT-i
OCR Text i 4banks x 4m x 8bits synchronous dram this document is a general produc t description and is subject to change without not ice. hynix semi...o synchronous dram state machine a0 a1 a11 ba0 ba1 address buffers address registers mode registers ...
Description 16Mx8|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 16Mx8 | 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M

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    MK23-80-I-2

Meder Electronic
Part No. MK23-80-i-2
OCR Text i - 2 i t e m : | e m a i l : s a l e s a s i a @ m e d e r . c o m 9 2 3 1 8 0 4 5 5 0 + 8 5 2 / 2 9 5 5 1 6 8 2 a s i a : | e m a i l : s a l e s u s a @ m e d e r . c o m + 1 / 5 0 8 2 9 5 0 7 7 1 u s a : i t e m ...
Description MK Reed Sensor

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    HYNIX SEMICONDUCTOR INC
Part No. HY62SF16804A-i HY62SF16804A-C HY62SF16804A-SM10i
OCR Text ... 1.7~2.3 70/85/100 HY62SF16804A-i 1.7~2.3 70/85/100 Note 1. C : Commercial, i : industrial 2. Current value is max. FEATURES * Fully sta...O BUFFER ADD iNPUT BUFFER PRE DECODER Vss iO12 A17 A7 A10 A13 A14 A0 A3 A5 Vcc iO13 V...
Description 512K X 16 STANDARD SRAM, 100 ns, PBGA48
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits

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    HYNIX
Part No. HY62SF16806A-i HY62SF16806A-C
OCR Text ...85/100 3 25 8 0~70 HY62SF16806A-i 1.7~2.3 70/85/100 3 25 8 -40~85 Note 1. C : Commercial, i : industrial 2. Current value is max. DESCRiP...O BUFFER iO10 iO11 A5 Vss Vcc iO12 A17 iO13 Vss iO3 Vcc Vss iO7 A18 MEMORY ARRAY 512K x 16...
Description High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits

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    Mitsubishi
Part No. M5M51008KR-10LL-i M5M51008KR-70LL M5M51008KR-55LL M5M51008KR-10L M5M51008KR-70L M5M51008KR-55L M5M51008BP M5108i
OCR Text i 1048576-BiT(131072-WORD BY 8-BiT)CMOS STATiC RAM DESCRiPTiON The M5M51008BP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized ...O bus Common data i/O Package M5M51008BP ************ 32pin 600mil DiP M5M51008BFP ************ 32pi...
Description 1048576-BiT(131072-WORD BY 8-BiT)CMOS STATiC RAM
From old datasheet system

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    LP62S16512-I LP62S16512U-55LLI LP62S16512U-70LLI LP62S16512-ISERIES

AMICC[AMIC Technology]
AMIC Technology Corporation
Part No. LP62S16512-i LP62S16512U-55LLi LP62S16512U-70LLi LP62S16512-iSERiES
OCR Text i Series Preliminary Document Title 512K X 16 BiT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.2 512K X 16 BiT LOW VOLTAGE CMOS ...O using three-state output n Data retention voltage: 2.0V (min.) n Available in 48-ball CSP (8x10mm)...
Description 512K X 16 BiT LOW VOLTAGE CMOS SRAM
Shielded Paired Cable; Number of Conductors:2; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape; Number of Pairs:1 RoHS Compliant: Yes
Shielded Paired Cable; Number of Conductors:2; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:1; Leaded Process Compatible:Yes RoHS Compliant: Yes

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    AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
Part No. LP62S16256FV-i LP62S16256F-i LP62S16256FU-55LLi LP62S16256FU-55LLiF LP62S16256FU-70LLi LP62S16256FU-70LLiF LP62S16256FV-55LLi LP62S16256FV-55LLiF LP62S16256FV-70LLi LP62S16256FV-70LLiF
OCR Text i Series Preliminary Document Title 256K X 16 BiT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 0.1 0.2 0.3 0.4 256K X 16 BiT L...O using three-state output Data retention voltage: 2.0V (min.) Available in 44-pin TSOP and 48-ball ...
Description 256K X 16 BiT LOW VOLTAGE CMOS SRAM 256 × 16位低电压CMOS的SRAM

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    81N10-H-AB3-I-R 81N11-H-AB3-I-R 81N12-H-AB3-I-R 81N28-R-AB3-I-R 81N30L-J-AB3-I-R 81CXXX 81N30-H-AB3-I-R 81N30-J-AB3-I-R

友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. 81N10-H-AB3-i-R 81N11-H-AB3-i-R 81N12-H-AB3-i-R 81N28-R-AB3-i-R 81N30L-J-AB3-i-R 81CXXX 81N30-H-AB3-i-R 81N30-J-AB3-i-R 81N30-R-AB3-i-R 81N30L-H-AB3-i-R 81N30L-R-AB3-i-R 81N28-H-AB3-i-R 81N28-J-AB3-i-R 81N28L-H-AB3-i-R 81N28L-J-AB3-i-R 81N28L-R-AB3-i-R 81N33-H-AB3-i-R 81N33-J-AB3-i-R 81N33-R-AB3-i-R 81N33L-H-AB3-i-R 81N33L-J-AB3-i-R 81N33L-R-AB3-i-R 81NXXX 81N10-J-AB3-i-R 81N10L-H-AB3-i-R 81N10L-J-AB3-i-R 81N10L-R-AB3-i-R 81N10-R-AB3-i-R 81N11-J-AB3-i-R 81N11L-H-AB3-i-R 81N11L-J-AB3-i-R 81N11L-R-AB3-i-R 81N11-R-AB3-i-R 81N12-J-AB3-i-R 81N12L-H-AB3-i-R 81N12L-J-AB3-i-R 81N12L-R-AB3-i-R 81N12-R-AB3-i-R 81N13-H-AB3-i-R 81N13-J-AB3-i-R 81N13L-H-AB3-i-R 81N13L-J-AB3-i-R 81N13L-R-AB3-i-R 81N13-R-AB3-i-R 81N14-H-AB3-i-R 81N14-J-AB3-i-R 81N14L-H-AB3-i-R 81N14L-J-AB3-i-R 81N14L-R-AB3-i-R 81N14-R-AB3-i-R 81N15-H-AB3-i-R 81N15-J-AB3-i-R 81N15L-H-AB3-i-R 81N15L-J-AB3-i-R 81N15L-R-AB3-i-R 81N15-R-AB3-i-R 81N16-H-AB3-i-R 81N16-J-AB3-i-R 81N16L-H-AB3-i-R 81N16L-J-AB3-i-R 81N16L-R-AB3-i-R 81N16-R-AB3-i-R 81N17-H-AB3-i-R 81N17-J-AB3-i-R 81N17L-H-AB3-i-R 81N17L-J-AB3-i-R 81N17L-R-AB3-i-R 81N17-R-AB3-i-R 81N18-H-AB3-i-R 81N18-J-AB3-i-R 81N18L-H-AB3-i-R 81N18L-J-AB3-i-R 81N18L-R-AB3-i-R 81N18-R-AB3-i-
OCR Text ...92-E-K Note: 1. Pin assignment: i:Vin O:Vout G:Vss 2.xx: Output Voltage, refer to Marking information. Package SOT-89 SOT-23 SOT-23 TO-92 TO-92 TO-92 TO-92 Pin Assign. 1 2 3 O i G OG i GO i i GO O i G i GO O i G Packing Tape Reel Tape Reel ...
Description VOLTAGE DETECTORS WiTH BUiLT-iN DELAY TiME

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    Silicon Storage Technology, Inc.
Part No. SST89V564RD-33-i-NJ SST89V564RD-33-C-TQJ SST89V564RD-33-C-PiE SST89V564RD-33-i-QiF SST89V564RD-33-i-TQJE SST89E564RD-40-C-PiE SST89E564RD-40-C-NJE
OCR Text ...ounter array (pca) ? four 8-bit i/o ports (32 i/o pins) ? second dptr register ? low emi mode (inhibit ale) ? spi serial interface ? standard 12 clocks per cycle, the device has an option to double the speed to 6 clocks per cycle. ? ttl- a...
Description FlashFlex MCU 8-BiT, FLASH, 33 MHz, MiCROCONTROLLER, PQCC44
FlashFlex MCU 8-BiT, FLASH, 33 MHz, MiCROCONTROLLER, PQFP44
FlashFlex MCU 8-BiT, FLASH, 33 MHz, MiCROCONTROLLER, PDiP40
FlashFlex MCU 8-BiT, FLASH, 33 MHz, MiCROCONTROLLER, QCC40
FlashFlex MCU 8-BiT, FLASH, 40 MHz, MiCROCONTROLLER, PDiP40
FlashFlex MCU 8-BiT, FLASH, 40 MHz, MiCROCONTROLLER, PQCC44

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