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				IRF[International Rectifier]
Part No.	IRF730A IRF730 IRF730APBF
OCR Text	...3 LE AD A S SIG NME NT S 1 - GA TE 2 - DR A IN 3 - S OU RCE 4 - DR A IN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (....
Description	400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package SMPS MOSFET
File Size	100.63K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7413A IRF7413ATR
OCR Text	...100 120 140 160 A V G S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF7413A 3200 2800 2400 2000 1600 1200 800 ...
Description	Power MOSFET(Vdss=30V/ Rds(on)=0.0135ohm) Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm) 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	112.28K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7416 IRFB7416 IRF7416TR
OCR Text	...100 120 140 160 A -VG S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF7416 4000 -V G S , G a te -to -S o u ...
Description	Power MOSFET(Vdss=-30V/ Rds(on)=0.02ohm) Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm) -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
File Size	112.47K / 9 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-10100 ATF-10100-GP3
OCR Text	....0 140 130 -1.3 180 -0.8 0.7 GA Gain @ NFO; VDS = 2 V, IDS = 25 mA P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Compression V...a higher, though more accurate determination of jc than do alternate methods. See APPLICATIONS PRIME...
Description	0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	46.17K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136
OCR Text	....0 140 130 -1.3 180 -0.5 0.6 GA Gain @ NFO; VDS = 2 V, IDS = 25 mA P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Compression V...a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175C. 5. T...
Description	ER 3C 3#16 PIN RECP BOX 0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	41.86K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236
OCR Text	....0 140 130 -1.3 180 -0.8 1.0 GA Gain @ NFO; VDS = 2 V, IDS = 25 mA P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Compression V...a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175C. 5. T...
Description	ER 2C 2#16S PIN RECP BOX 0.5?12 GHz Low Noise Gallium Arsenide FET 0.5-12 GHz Low Noise Gallium Arsenide FET 0.512 GHz Low Noise Gallium Arsenide FET
File Size	42.09K / 3 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
Part No.	ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text	....0 140 130 -1.3 180 -0.5 1.4 GA Gain @ NFO; VDS = 2 V, IDS = 25 mA P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Compression V...a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175C. 5. T...
Description	0.5-12 GHz General Purpose Gallium Arsenide FET 0.5?12 GHz General Purpose Gallium Arsenide FET 0.512 GHz General Purpose Gallium Arsenide FET
File Size	44.24K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-13100 ATF-13100-GP3
OCR Text	... -3.0 55 50 -1.5 90 -0.8 1.2 GA Gain @ NFO; VDS = 2.5 V, IDS = 20 mA 9.0 P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Comp...a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS secti...
Description	2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET) 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管（2-18 GHz的低噪声砷化镓场效应管）
File Size	38.39K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text	... -4.0 55 50 -1.5 90 -0.5 1.6 GA Gain @ NFO: VDS = 2.5 V, IDS = 20 mA 8.0 P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Comp...a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175C. 4. T...
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	41.75K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13736 ATF-13736-STR ATF-13736-TR1
OCR Text	...5 8.5 55 50 -1.5 90 -0.5 2.2 GA Gain @ NFO: VDS = 2.5 V, IDS = 20 mA 8.0 P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Comp...a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175C. 5. T...
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	44.11K / 4 Page	View it Online	Download Datasheet

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