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For calculating Found Datasheets File :: 3252 Search Time::1.047ms
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				Motorola, Inc
Part No.	MMSF4P01HD ON2266
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	From old datasheet system SINGLE TMOS POWER FET 4.0 AMPERES 12 VOLTS
File Size	296.63K / 10 Page	View it Online	Download Datasheet

				Motorola, Inc.
Part No.	MMSF5N02HD ON2268
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	SINGLE TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS From old datasheet system
File Size	293.25K / 10 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi
Part No.	MMSF5N03HD MMSF5N03HD_D ON2270
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	SINGLE TMOS POWER MOSFET 5.0 AMPERES 30 VOLTS From old datasheet system
File Size	294.36K / 10 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTMS7N03R2
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	Power MOSFET 7 Amps, 30 Volts
File Size	97.78K / 12 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTP85N03 NTP85N03G NTB85N03G
OCR Text	...ce data is difficult to use for calculating rise and fall because drain?gate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av) ...
Description	Power MOSFET 85 Amps, 28 Volts N?Channel TO?20 and D2PAK
File Size	75.45K / 7 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTP18N06LG NTB18N06LG
OCR Text	...ce data is difficult to use for calculating rise and fall because drain?gate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av) ...
Description	Power MOSFET 15 Amps, 60 Volts, Logic Level
File Size	83.12K / 8 Page	View it Online	Download Datasheet

				Omron Electronics LLC
Part No.	ZX-LT030 ZX-LT001 ZX-LT005 ZX-LT010 ZX-LD300L ZX-LDA11-N ZX-LD40 ZX-LD40L ZX-LD30VL ZX-LDA41-N ZX-LD100
OCR Text	... accessories (order separately) calculating unit side-view attachments logging tool for personal computers setup tool for personal computer note 1. the zx-sfw11ev3 or zx-sw11ev3 is required to use the smart monitor with the zx-lda11-n/41-n...
Description	Smart Sensors (Laser Type) ZX Series (ZX-L-N) Smart Sensors (Laser Type) ZX Series (ZX-L-N)
File Size	696.59K / 29 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTD20N06-1G
OCR Text	...ce data is difficult to use for calculating rise and fall because drain ? gate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av...
Description	Power MOSFET 20 A, 60 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	123.93K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc]
Part No.	MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM From old datasheet system
File Size	252.63K / 10 Page	View it Online	Download Datasheet

				MOTOROLA INC Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTD5P06E
OCR Text	...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description	TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM
File Size	207.75K / 10 Page	View it Online	Download Datasheet

For calculating Found Datasheets File :: 3252 Search Time::1.047ms
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