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  920-960 Datasheet PDF File

For 920-960 Found Datasheets File :: 1492    Search Time::1.25ms    
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    PTMA080152M10

Infineon Technologies AG
Part No. PTMA080152M10
OCR Text ...2 = 280 ma, fixture tuned for 920 - 960 mhz 0 5 10 15 20 25 30 35 700 750 800 850 900 950 1000 1050 1100 frequency (mhz) gain (db) -25 -20 -15 -10 -5 0 5 10 return loss (db) gain return loss description the ptma080302m is a wideband, matc...
Description Wideband RF LDMOS Integrated Power Amplifier 30 W, 700-1000 MHz

File Size 358.38K  /  11 Page

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    Freescale (Motorola)
Part No. MRF5S9101MBR1 MRF5S9101NBR1 MRF5S9101NR1
OCR Text ... ma, 869 mhz<frequency<894 mhz, 920 mhz<frequency<960 mhz power gain g ps ? 18 ? db drain efficiency d ? 42 ? % error vector magnitude evm ? 2.3 ? % rms spectral regrowth at 400 khz offset sr1 ? -63 ? dbc spectral regrowth at 600 khz offse...
Description RF Power Field Effect Transistors

File Size 458.84K  /  16 Page

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    PTFB090901FA PTFB090901EA

Infineon Technologies AG
Part No. PTFB090901FA PTFB090901EA
OCR Text ...power rf ldmos fets 90 w, 28 v, 920 ? 960 mhz description the ptfb090901ea and ptfb090901fa are 90-watt ldmos fets intended for use in multi-standard cellular power ampli? er applications in the 920 to 960 mhz frequency band. features in-...
Description Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz

File Size 227.02K  /  14 Page

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    MRF8S9202N

Freescale Semiconductor, Inc
Part No. MRF8S9202N
OCR Text ...lications with frequencies from 920 to 960 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single--carrier w--cdma performance: v dd =28volts,i dq = 1300 ma, p out = 58 watts avg....
Description RF Power Field Effect Transistor N-Channel Enhancement--Mode Lateral MOSFET

File Size 644.74K  /  13 Page

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    MRF8S9202N12 MRF8S9202GNR3 MRF8S9202NR3

Freescale Semiconductor, Inc
Part No. MRF8S9202N12 MRF8S9202GNR3 MRF8S9202NR3
OCR Text ... (%) output par (db) acpr (dbc) 920 mhz 18.8 36.0 6.3 --39.5 940 mhz 18.7 37.0 6.2 --38.6 960 mhz 18.6 38.5 5.9 --37.1 ? capable of handling 7:1 vswr, @ 32 vdc, 940 mhz, 380 watts cw (1) output power (3 db input overdrive from rated p out )...
Description RF Power Field Effect Transistors

File Size 391.04K  /  14 Page

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    MRF8S9170NR310

Freescale Semiconductor, Inc
Part No. MRF8S9170NR310
OCR Text ...lications with frequencies from 920 to 960 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single--carrier w--cdma performance: v dd =28volts,i dq = 1000 ma, p out = 50 watts avg....
Description RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

File Size 455.97K  /  13 Page

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    MRF8S9200NR310

Freescale Semiconductor, Inc
Part No. MRF8S9200NR310
OCR Text ...lications with frequencies from 920 to 960 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single--carrier w--cdma performance: v dd =28volts,i dq = 1400 ma, p out = 58 watts avg....
Description RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

File Size 484.00K  /  13 Page

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    PTFA091503EL

Infineon Technologies AG
Part No. PTFA091503EL
OCR Text ... high power rf ldmos fet 150 w, 920 C 960 mhz description the ptfa091503el is a 150-watt, internally-matched fet intended for use in power amplifer applications in the 920 to 960 mhz band. this device features internal i/o matching and th...
Description Thermally-Enhanced High Power RF LDMOS FET 150 W, 920-960 MHz

File Size 436.63K  /  11 Page

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