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NXP Semiconductors N.V.
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| Part No. |
BT136S-800
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| OCR Text |
...itive peak off-state voltage --800v i tsm non-repetitive peak on-state current full sine wave; t j(init) =25c; t p = 20 ms; see figure 4 ; see figure 5 --25a i t(rms) rms on-state current full sine wave; t mb 107 c; see figure 1 ;... |
| Description |
4Q Triac
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| File Size |
131.64K /
15 Page |
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NXP Semiconductors N.V.
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| Part No. |
BT136-800E BT136-800E127
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| OCR Text |
...itive peak off-state voltage --800v i tsm non-repetitive peak on-state current full sine wave; t j(init) =25c; t p = 20 ms; see figure 4 ; see figure 5 --25a i t(rms) rms on-state current full sine wave; t mb 107 c; see figure 1 ;... |
| Description |
4Q Triac 4Q双向可控
Triacs sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>ms</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: week 1, 2005
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| File Size |
120.34K /
13 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQPF2N80
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| OCR Text |
800v N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's p...ms
100 s
1.2
ID, Drain Current [A]
10 ms
10
0
100 ms DC
ID, Drain Current [A]
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| Description |
800v N-Channel MOSFET
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| File Size |
618.00K /
8 Page |
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New Jersey Semi-Conductor P...
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| Part No. |
ST083S
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| OCR Text |
... (*) t = 10 to 20|js for 400 to 800v devices tq = 15 to 30us for 1000 to 1200v devices case style to-209ac (to-94) quality semi-conductors
...ms us conditions vtjmax'vdrm=ratedvdrm l. . = 2 x di/dt i tvl v 25c' vdm = rated vdrm' 'tm = 50a dc'... |
| Description |
INVERTER GRADE THYRISTORS
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| File Size |
153.38K /
4 Page |
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it Online |
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Price and Availability
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