800v 3a pdf Datasheet P4 Full Text Search --- IC-ON-LINE


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800v 3a Datasheet PDF File

For 800v 3a Found Datasheets File :: 725 Search Time::2.875ms
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				Infineon Technologies AG Infineon Technologies A...
Part No.	IGP03N120H208 IGW03N120H2
OCR Text	...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 82) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 2...3a 2A 1A VGE=15V 12V 10V 8V 6V 4A 2A 0A 0V 1V 2V 3V 4V 5V 0A 0V 1V ...
Description	HighSpeed 2-Technology
File Size	340.03K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies AG http:// Infineon Technologies A...
Part No.	IGD01N120H2 IGP01N120H207
OCR Text	...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 241) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = ...3a 2A 10W 1A 5W 0W 25C 50C 75C 100C 125C 150C 0A 25C 50C 75C ...
Description	HighSpeed 2-Technology
File Size	905.76K / 13 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM150DY-3H QM150
OCR Text	...n. -- -- -- -- -- -- 100 -- VCC=800v, IC=150A, IB1=-IB2=3a -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 15 15 400 3.0...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	77.04K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	KA1L0380B KA1L0380RB
OCR Text	...L TO-220F-4L(Forming) Rating 800v, 3a 800v, 3a 800v, 3a 800v, 3a Fosc 50kHz 50kHz 67kHz 100kHz DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILI...
Description	Fairchild Power Switch(FPS) From old datasheet system
File Size	87.22K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SKB02N12007 SKB02N120
OCR Text	...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 91) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 7A 60W 6A 50W 5A 4A 3a 2A 1A 0A 25C 40W 30W 20W 10W 0W 25C IC, CO...
Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	1,155.61K / 13 Page	View it Online	Download Datasheet

				Infineon
Part No.	SGI02N120
OCR Text	...gy e ts t j =25 c, v cc =800v, i c =2a, v ge =15v/0v, r g =91 ? , l 1) =180nh, c 1) =40pf energy losses include ?tail? and di...3a 4a 5a 6a 7a t c , case temperature t c , case temperature figure 3. power dissipation ...
Description	IGBTs & DuoPacks - 2A 600V TO 262 SMD IGBT
File Size	324.52K / 13 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation]
Part No.	APT7M120S APT7M120B
OCR Text	...F 5 VGS = 0V, VDS = 0V to 800v Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge ...3a, VDS = 600V Resistive Switching VDD = 800v, ID = 3a RG = 4.7 6 , VGG = 15V 38 80 13 37 14 8 45...
Description	N-Channel MOSFET
File Size	249.66K / 4 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGP02N12007 SGP02N120 SGD02N120 SGI02N120
OCR Text	...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 91) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 7A 60W 6A 50W 5A 4A 3a 2A 1A 0A 25C 40W 30W 20W 10W 0W 25C IC, CO...
Description	Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
File Size	375.94K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGB02N12007 SGB02N120
OCR Text	...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 91) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 7A 60W 6A 50W 5A 4A 3a 2A 1A 0A 25C 40W 30W 20W 10W 0W 25C IC, CO...
Description	Fast IGBT in NPT-technology Lower Eoff compared to previous generation
File Size	433.31K / 11 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	P6NC80
OCR Text	800v - 1.5 w - 5.4a to-220/fp/d2pak/i2pak zener-protected powermesh?iii mosfet n typical r ds (on) = 1.5 w n extremely high dv/dt and capab...3a 1.5 1.8 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance ...
Description	Search --To STP6NC80
File Size	442.14K / 13 Page	View it Online	Download Datasheet

For 800v 3a Found Datasheets File :: 725 Search Time::2.875ms
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