7a 400v pdf Datasheet P4 Full Text Search --- IC-ON-LINE


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7a 400v Datasheet PDF File

For 7a 400v Found Datasheets File :: 730 Search Time::0.86ms
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				Advanced Power Electronics Corp.
Part No.	AP05N50I-HF14
OCR Text	...-resistance 3 v gs =10v, i d =2.7a - - 1.4 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ...400v , v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total g...
Description	Fast Switching Characteristic
File Size	57.03K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFIB8N50K
OCR Text	... RDS(on) typ. 290m ID 6.7a TO-220 FULL-PAK Absolute Maximum Ratings Parameter ID @ TC = 25C Continuous Drain Current, VGS @ ...400v, VGS = 0V, TJ = 125C VGS = 30V VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) P...
Description	500V Single N-Channel HEXFET Power MOSFET in a TO-220FullPak package SMPS MOSFET
File Size	135.61K / 8 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOTF14N50FD AOT14N50FD
OCR Text	...e on-resistance v gs =10v, i d =7a reverse transfer capacitance i f =14a,di/dt=100a/ m s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching pa...400v i d =14a 1 10 100 1000 10000 0.1 1 10 100 v ds (volts) figure 8: capacitance characteristics c...
Description	500V, 14A N-Channel MOSFET
File Size	229.20K / 6 Page	View it Online	Download Datasheet

				NTE Electronics, Inc. NTE[NTE Electronics]
Part No.	NTE2638
OCR Text	...Sustaining Voltage: 400v Min at 7a Absolute Maximum Ratings: (TC = +25C unless otherwise specifieid) Collector-Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400v C...
Description	Silicon NPN Transistor Darlington
File Size	24.15K / 3 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOD7S60
OCR Text	7a a aa a mos tm power transistor v ds @ t j,max 700v i dm 33a r ds(on),max 0.6 w q g,typ 8.2nc e oss @ 400v 1.9 m j symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt t j , t stg t...
Description	600V 7a a MOS TM Power Transistor
File Size	541.08K / 7 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKB02N60 SKP02N60
OCR Text	...0W 25W 20W 15W 10W 5W 0W 25C 7a 6A 5A 4A 3A 2A 1A 0A 25C IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 50C 75C 100C 125...400v, VGE = 0/+15V, RG = 11 8, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typ...
Description	IGBTs & DuoPacks - 2A 600V TO220AB IGBT Diode IGBTs & DuoPacks - 2A 600V TO263AB SMD IGBT Diode Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	392.65K / 13 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SGB02N60 SGP02N60 Q67040-S4504 Q67040-S4505 Q67041-A4707 SGD02N60
OCR Text	...0W 25W 20W 15W 10W 5W 0W 25C 7a 6A 5A 4A 3A 2A 1A 0A 25C IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 50C 75C 100C 125...400v, VGE = 0/+15V, RG = 11 8, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typ...
Description	FAST IGBT IN NPT TECHNOLOGY 快速IGBT技术在不扩散核武器条约 IGBTs & DuoPacks - 2A 600V TO263AB SMD IGBT IGBTs & DuoPacks - 2A 600V TO 252AA SMD IGBT IGBTs & DuoPacks - 2A 600V TO220AB IGBT
File Size	383.92K / 12 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp. Advanced Power Electron...
Part No.	AP05N50S-HF
OCR Text	...on-resistance v gs =10v, i d =2.7a - - 1.4 ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v...400v , v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total g...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	92.00K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP05N50H-HF14
OCR Text	...-resistance 3 v gs =10v, i d =2.7a - - 1.4 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ...400v , v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total g...
Description	Fast Switching Characteristic N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	56.01K / 4 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STD9NM50N
OCR Text	... resistance v gs = 10v, i d = 3.7a 0.47 0.56 ? table 5. dynamic symbol parameter test conditions min typ max unit g fs (1) 1. pulsed: pul...400v 94 pf rg gate input resistance f=1mhz gate dc bias=0 test signal level=20mv open drain 6 ? q g...
Description	N-channel Power MOSFET
File Size	494.33K / 17 Page	View it Online	Download Datasheet

For 7a 400v Found Datasheets File :: 730 Search Time::0.86ms
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