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Excelics Semiconductor
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| Part No. |
EPA080A
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| OCR Text |
...e breakdown voltage igs=1.0ma -7 -14 v rth thermal resistance (au-sn eutectic attach) 55 o c/w maximum ratings at 25 o c symbols parameters absolute 1 continuous 2 vds drain-source voltage 12v 8v vgs gate-sour... |
| Description |
8-12V high efficiency heterojunction power FET
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| File Size |
29.08K /
2 Page |
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it Online |
Download Datasheet
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Excelics Semiconductor
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| Part No. |
EPA080A-100F
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| OCR Text |
7<3 7<3 *' excelics epa080a-100f data sheet high effi...12ghz vds=8v, ids=50% idss 26.0 27.5 dbm g 1db gain at ... |
| Description |
8-12V high efficiency heterojunction power FET
|
| File Size |
26.13K /
2 Page |
View
it Online |
Download Datasheet
|
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|
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Excelics Semiconductor
|
| Part No. |
EPA060A
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| OCR Text |
...e breakdown voltage igs=1.0ma -7 -14 v rth thermal resistance (au-sn eutectic attach) 65 o c/w maximum ratings at 25 o c symbols parameters absolute 1 continuous 2 vds drain-source voltage 12v 8v vgs gate-sour... |
| Description |
8-12V high efficiency heterojunction power FET
|
| File Size |
28.76K /
2 Page |
View
it Online |
Download Datasheet
|
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