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				Elpida Memory
Part No.	HM5113165FTD-6
OCR Text	6 128M EDO DRAM (8-Mword x 16-bit) 4k refresh EO Description Features Type No. HM5113165FTD-6 E0177H10 (Ver. 1.0) Jul. 5, 2001 T...Column address A0 to A10 Column address strobe Pr (Top view) Data Sheet E0177H10 od t u...
Description	128M EDO DRAM (8-Mword × 16-bit) 4k refresh 128M EDO DRAM (8-Mword 隆驴 16-bit) 4k refresh
File Size	243.87K / 27 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY5S7B2ALFP-6 HY5S7B2ALFP-H HY5S7B2ALFP-S
OCR Text	...MATION Part Number HY5S7B2ALFP-6 HY5S7B2ALFP-H HY5S7B2ALFP-S Clock Frequency 166MHz 133MHz 105MHz CAS Latency 3 3 3 4banks x 4Mb x 32 LVCMO...Column Address : CA0 ~ CA8 Auto-precharge flag : A10 Command Inputs : RAS, CAS and WE define the ope...
Description	512M (16Mx32bit) Mobile SDRAM
File Size	1,068.04K / 53 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY5S5B6GLF-6 HY5S5B6GLF-6E HY5S5B6GLF-H HY5S5B6GLF-HE HY5S5B6GLF-S HY5S5B6GLF-SE HY5S5B6GLFP-6 HY5S5B6GLFP-6E HY5S5B6GLFP-H HY5S5B6GLFP-HE HY5S5B6GLFP-S HY5S5B6GLFP-SE
OCR Text	...RMATION Part Number HY5S5B6GLF-6 HY5S5B6GLF-H HY5S5B6GLF-S HY5S5B6GLFP-6 HY5S5B6GLFP-H HY5S5B6GLFP-S HY5S5B6GLF-6E HY5S5B6GLF-HE HY5S5B6GLF...Column Address : CA0 ~ CA8 Auto-precharge flag : A10 Command Inputs : RAS, CAS and WE define the ope...
Description	256Mbit (16Mx16bit) Mobile SDR Memory
File Size	628.90K / 52 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY5S7B6ALFP-6 HY5S7B6ALFP-H HY5S7B6ALFP-S
OCR Text	...MATION Part Number HY5S7B6ALFP-6 HY5S7B6ALFP-H HY5S7B6ALFP-S Clock Frequency 166MHz 133MHz 105MHz CAS Latency 3 3 3 4banks x 8Mb x 16 LVCMO...Column Address : CA0 ~ CA9 Auto-precharge flag : A10 Command Inputs : RAS, CAS and WE define the ope...
Description	512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
File Size	657.23K / 52 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. HYNIX[Hynix Semiconductor]
Part No.	HY51V65163HGT-6 HY51V65163HGT-45 HY51V65163HGT-5
OCR Text	...163HG/HGL-5 HY51V(S)65163HG/HGL-6 tRAC 45ns 50ns 60ns tAA 23ns 25ns 30ns tCAC 12ns 13ns 15ns tRC 74ns 84ns 104ns tHPC 17ns 20ns 25ns * ...Column Address Strobe Write Enable Output Enable Address Inputs Refresh Address Inputs Data Input / ...
Description	4M x 16Bit EDO DRAM 4M X 16 EDO DRAM, 50 ns, PDSO50 4M x 16Bit EDO DRAM 4M X 16 EDO DRAM, 60 ns, PDSO50
File Size	95.00K / 11 Page	View it Online	Download Datasheet

				Vanguard International Semiconductor, Corp. Electronic Theatre Controls, Inc. Vanguard International Semiconductor Corporation List of Unclassifed Manufacturers
Part No.	VG36644080_1641DTL-6 VG36641641DT VG36648041DT VG36644080/1641DTL-7L VG36644080/1641DTL-6 VG36644041DTL-8H VG36644041DTL-7L VG36644041DT-7 VG36644041DTL-6 VG36644041DT-7L VG36644041DT-8H VG36644041DT-6 VG36641641DT-7L VG36641641DTL-7L VG36641641DT-8H VG36641641DTL-8H VG36641641DT-6 VG36641641DTL-6 VG36648041DT-8H VG36648041DTL-7L VG36648041DT-6 VG36648041DT-7L VG36648041DTL-6 VG36648041DTL-8H VG36644080/1641DTL-8H
OCR Text	... * High speed clock cycle time -6 : 166MHz<3-3-3>, available only on 4MX16 option -7 : 143MHz<3-3-3>, 133MHz<2-3-2> -7L: 133MHz<3-3-3> -8H: ...column access in every cycle * Quad internal banks controlled by A12 & A13 (Bank Select) * Byte cont...
Description	CMOS Synchronous Dynamic RAM 同步动态随机存储器的CMOS
File Size	1,383.69K / 69 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MH64S72QJA-6 B99050
OCR Text	6 4,831,838,208-BIT ( 64,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM DESCRIPTION The MH64S72QJA is 64108864 - word x 72-bit Sy nch...Column access random Burst W rite / Single W rite (programmable) Auto precharge / Auto bank precharg...
Description	From old datasheet system 4,831,838,208-BIT ( 64,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
File Size	958.55K / 56 Page	View it Online	Download Datasheet

				AMICC[AMIC Technology]
Part No.	A43L1632V-6 A43L1632V-7 A43L1632
OCR Text	...equency (max) : 166MHz @ CL=3 (-6) 143MHz @ CL=3 (-7) 512K X 32 Bit X 4 Banks Synchronous DRAM DQM for masking Auto & self refresh 64m...Column Decoder Column Buffer Latency & Burst Length LRAS LCAS LRAS LCBR LWE Programmi...
Description	512K X 32 Bit X 4 Banks Synchronous DRAM
File Size	1,056.71K / 43 Page	View it Online	Download Datasheet

				http:// Mitsubishi
Part No.	MH64S72AWJA-6 MH64S72AWJA-8 MH64S72AWJA-7
OCR Text	6,-7,-8 4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM DESCRIPTION The MH64S72AWJA is 67108864 - word x 72-bit...Column access random Burst W rite / Single W rite (programmable) Auto precharge / Auto bank precharg...
Description	4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM 4 /831 /838 /208-BIT ( 67 /108 /864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
File Size	948.66K / 56 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
Part No.	MH16S64APHB-6 MH16S64APHB-7 MH16S64APHB-8
OCR Text	6,-7,-8 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM DESCRIPTION The MH16S64APHB is 16777216 - word by 64-bit Synchr...Column access - random Auto precharge / All bank precharge controlled by A10 Auto refresh and Self r...
Description	1 /073 /741 /824-BIT (16 /777 /216 - WORD BY 64-BIT)Synchronous DRAM 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM 1073741824位（16,777,216 -文字4位）同步DRAM
File Size	701.03K / 55 Page	View it Online	Download Datasheet

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