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6-9ghz Datasheet PDF File

For 6-9ghz Found Datasheets File :: 789 Search Time::2.094ms
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				Sanyo Semicon Device
Part No.	SPM3252
OCR Text	...s unit : mm 1273 [SPM3252] 0.6 Control voltage +3 / 0V. Miniature mold package. Low loss and high linearity by adopting -structure, th...9GHz Control voltage +3 / 0V f=1.9GHz Control voltage +3 / 0V f=1.9GHz f=1.9GHz Control voltage +3 /...
Description	GaAs MMIC SPDT Switch
File Size	18.13K / 3 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	SPM3255
OCR Text	...ons unit:mm 1273 [SPM3255] 0.6 0.4 6 4 0 to 0.1 1.6 2.8 0.95 0.95 1.9 2.9 0.6 1 3 0.16 Specifications Absolute Maximum Ratings at Ta ...9GHz f=1.9GHz f=810 to 1033MHz f=1.9GHz f=810 to 1033MHz f=1.9GHz f=810MHz to 1.9GHz f=810MHz to 1.9...
Description	Single Power Supply Operation RF Switch MMIC
File Size	28.82K / 3 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP196W Q62702-F1576
OCR Text	...z Transducer gain \|S21e\|2 12.5 6.5 17.5 11.5 - IC = 50 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) Gma = \|S21/S12\| (k-(k2-1)1...9GHz VCE = Parameter 20 dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 12 dB 18 ...
Description	From old datasheet system NPN Silicon RF Transistor(For low noise low distortion broadband amplifiers in antenna and telecommunications) NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)
File Size	60.65K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP196 Q62702-F1320
OCR Text	...z Transducer gain \|S21e\|2 12.5 6.5 16 10 - IC = 50 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) Gma = \|S21/S12\| (k-(k2-1)1/2) ...9GHz VCE = Parameter 18 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 10 10V dB 5V 3V...
Description	From old datasheet system NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)
File Size	61.07K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFR181W Q62702-F1491
OCR Text	...cy Values typ. max. Unit fT 6 8 0.32 0.22 0.3 - GHz pF 0.5 dB 1.45 1.8 - IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-base capaci...9GHz VCE = Parameter 20 dB 18 10V 5V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14...
Description	NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) From old datasheet system
File Size	56.17K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFR181 Q62702-F1314
OCR Text	...cy Values typ. max. Unit fT 6 8 0.26 0.18 0.3 - GHz pF 0.45 dB 1.45 1.8 - IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-base capac...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB dB ...
Description	From old datasheet system NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
File Size	57.16K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFS480 Q62702-F1531
OCR Text	... Q62702-F1531 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Collector-emit...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 15 dB dB ...
Description	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) From old datasheet system
File Size	52.38K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TIM7179-16UL
OCR Text	....5 8.5 4.4 35 -47 4.4 5.0 0.6 5.0 80 CONDITIONS VDS= 10V IDSset=3.6A dB A dB % f = 7.1 to 7.9GHz add IM3 Two-Tone Test Po= 31.5dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) dBc A C Recommended ...
Description	HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz
File Size	117.18K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TIM7179-25UL
OCR Text	...7.5 -44 TYP. MAX. 44.5 8.5 6.8 36 -47 5.2 7.6 0.6 6.0 80 CONDITIONS VDS= 10V IDSset=5.2A dB A dB % f = 7.1 to 7.9GHz add IM3 Two-Tone Test Po=33.5dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) ...
Description	HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz
File Size	117.53K / 4 Page	View it Online	Download Datasheet

				Avago Technologies
Part No.	MGA-25203
OCR Text	...rl 4 gnd 14 vcc2 13 bsply 5 bsw 6 n/c 7 rfout 11 n/c 9 n/c 8 ismn bias network omn gnd 2 gnd 3 gnd 12 gnd 10 nc bsply bsw nc nc rfout gnd gn...9ghz 3x3mm wifi and wimax power amplifi er data sheet free datasheet http://www.datasheet-pdf.com/ ...
Description	5.1-5.9GHz 3x3mm WiFi and WiMAX Power Amplifier
File Size	212.73K / 14 Page	View it Online	Download Datasheet

For 6-9ghz Found Datasheets File :: 789 Search Time::2.094ms
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