|
|
|
Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
|
Part No. |
UF840L-TF3-T UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T
|
OCR Text |
...e Energy Rating EAS 510 mJ (VDD=50v, starting TJ =25 , L=14mH, RG=25, peak IAS = 8A) Operating Temperature Range TOPR -55 ~ +150 Storage Tem...4a, VGS = 10V (Figure 14, 15) (Note 1) Forward Transconductance (Note 1) gFS VDS 50v, ID = 4.4a (Fi... |
Description |
8A, 500V, 0.85ohm, N-CHANNEL POWER MOSFET 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
File Size |
169.59K /
8 Page |
View
it Online |
Download Datasheet |
|
|
|
Harris Corporation
|
Part No. |
IRF510 IRF511 IRF512 IRF513
|
OCR Text |
... of operating temperature VGS = 50v, ID = 3.4a, (Figure 12) ID 5.6A, RGS = 24 , V = 50v, RL = 9 DD VDD = 50v, VGS = 10V, (Figures 17, 18) MOSFET switching times are essentially independent of operating temperature 1.3 -
0.4 0.5 2.0 8 25... |
Description |
4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs
|
File Size |
67.70K /
7 Page |
View
it Online |
Download Datasheet |
|
|
|
CET[Chino-Excel Technology]
|
Part No. |
CEF07N8
|
OCR Text |
...
Symbol
a
Condition
VDD 50v, L=30.6mH RG=25
Min Typ Max Unit
DRAIN-SOURCE AVALANCHE RATING
6
EAS IAS
500 7
mJ A
O...4a VGS = 10V, VDS = 10V VDS = 50v, ID =4a VDD = 400V, ID = 6A, VGS = 10V RGEN=25
800 50 100 2 1.... |
Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
File Size |
42.34K /
5 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|