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Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
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| Part No. |
HY5DU28422BT-X HY5DU28822BT-X HY5DU28822BLT-X
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| OCR Text |
...address buffer add bank control 4mx8/bank0 column decoder column address counter sense amp 2-bit prefetch unit 4mx8/bank1 4mx8/bank2 4mx8/bank3 mode register row decoder input buffer output buffer dll block mode register data strobe tr... |
| Description |
128M-S DDR SDRAM 128M的，拧DDR SDRAM内存
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| File Size |
343.53K /
33 Page |
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AMIC Technology, Corp.
AMIC Technology Corporation
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| Part No. |
A82DL3234 A82DL3244 A82DL3224UG-70 A82DL3224TG-70 A82DL3234TG-70IF A82DL3234UG-70I A82DL3244TG-70UF A82DL3234TG-70UF A82DL3224TG-70U A82DL3244UG-70UF A82DL3244UG-70I A82DL3244UG-70IF A82DL3224UG-70I A82DL3224UG-70IF A82DL3224UG-70UF A82DL3234UG-70UF A82DL3234UG-70F A82DL3244TG-70F A82DL3244TG-70IF A82DL3224TG-70IF A82DL32X4T A82DL3224
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| OCR Text |
4mx8 bit/2mx16 bit) cmos 3.3 volt-only, simultaneous operation flash memory and 4m (256kx16 bit) static ram preliminary preliminary (august, 2005, version 0.0) amic technology, corp. document title stacked mult... |
| Description |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAMA82DL32x4T（ü）32兆位Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAM，A82DL32x4T（ü）32兆位Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAM，A82DL32x4T（ü）32兆位4mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行
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| File Size |
940.95K /
60 Page |
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it Online |
Download Datasheet |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HY57V28820AT HY57V28820AT-H
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| OCR Text |
...ell array y decoders x decoders 4mx8 bank 1 4mx8 bank 0 4mx8 bank 2 4mx8 bank3
hy57v28820a rev. 1.3/aug. 01 absolute maximum ratings note : operation at above absolute maximum rating can adversely affect device reliability. dc operating... |
| Description |
16Mx8|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
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| File Size |
253.64K /
14 Page |
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it Online |
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