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  400v s Datasheet PDF File

For 400v s Found Datasheets File :: 10377    Search Time::1.593ms    
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    Solid State Optronics, Inc.
Part No. s110-H-s-TR-X
OCR Text ...tput Isolation exceeds 2500V AC 400v maximum Blocking Voltage 0.8A maximum Continuous Load Current Zero-volt switching * * * * Interfa...s High Output Isolation surface Mount Option PARAMETER storage Temperature Operating Temperatu...
Description 1 Form A solid state Relay

File Size 143.83K  /  4 Page

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    IRF[International Rectifier]
Part No. sD600N16PC
OCR Text ...n Period s D600N/ R s eries (400v to 2000V) RthJC (DC) = 0.1 K/ W s D600N/ R s eries (400v to 2000V) RthJC (DC) = 0.1 K/ W Conduction Angle 30 60 90 120 180 700 200 300 400 500 600 Average Forward Curr...
Description sTANDARD RECOVERY DIODEs

File Size 126.32K  /  9 Page

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    SEMIWELL[SemiWell Semiconductor]
Part No. sFP840
OCR Text ...25 C VDs = 500V, VGs = 0V VDs = 400v, TC = 125 C VGs = 30V, VDs = 0V VGs = -30V, VDs = 0V VDs = VGs, ID = 250uA VGs =10 V, ID = 4A 500 0.6 1...s Pulse Test 10 -1 10 -1 10 0 10 1 10 -1 2 3 4 VDs, Drain-...
Description 125W Power MOsFET, 500V Vdss, 8A Id, 0.85Om Rds
N-Channel MOsFET

File Size 870.98K  /  7 Page

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    AP05N50P AP05N50P-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP05N50P AP05N50P-14
OCR Text ...ge current (t j =125 o c) v ds =400v , v gs =0v - - 250 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 3 i d =3.1a...s. junction fig 4. normalized on-resistance temperature v.s. junct...
Description N-CHANNEL ENHANCEMENT MODE POWER MOsFET
Fast switching Characteristic

File Size 150.37K  /  5 Page

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    AOWF4S60

Alpha & Omega Semiconductors
Part No. AOWF4s60
OCR Text ....9 w q g,typ 6nc e oss @ 400v 1.5 m j 100% uis tested 100% r g tested symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness ...s g d s g d s g d s aow4s60 aowf4s60 rev 1: jan 2012 www.aosmd.com page 1 of 6 ...
Description 600V 4A a MOs TM Power Transistor

File Size 281.86K  /  6 Page

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    SGP20N60HS SGW20N60HS

INFINEON[Infineon Technologies AG]
Part No. sGP20N60Hs sGW20N60Hs
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 400v, VGE = 0/+15V, RG = 16) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. safe operating area (D = 0, TC = 25...s) 0.1137 2.24*10-2 7.86*10-4 9.41*10-5 R2 10 K/W single pulse 10 K/W 1s -4 C 1 = 1 / R 1 C ...
Description High speed IGBT in NPT-technology

File Size 429.45K  /  12 Page

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    SKW20N60 Q67040-S4242

INFINEON[Infineon Technologies AG]
Part No. sKW20N60 Q67040-s4242
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 400v, VGE = 0/+15V, RG = 16) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. safe operating area (D = 0, TC = 25...s)= 0.1137 2.24*10-2 7.86*10-4 9.41*10-5 R2 10 K/W single pulse -3 C 1= 1/R 1 C 2= 2/R ...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 272.85K  /  14 Page

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    INFINEON[Infineon Technologies AG]
Infineon Technologies A...
Part No. sGW15N60 sGB15N60 sGP15N60
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 400v, VGE = 0/+15V, RG = 21) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. safe operating area (D = 0, TC = 25...s)= 0.04968 2.58*10-3 2.54*10-4 3.06*10-4 R2 0.2mJ 10 K/W single pulse -3 C 1= 1/R 1 ...
Description IGBTs & DuoPacks - 15A 600V TO247AC IGBT
IGBTs & DuoPacks - 15A 600V TO263AB sMD IGBT
Fast s-IGBT in NPT-Technology
Fast IGBT in NPT-technology

File Size 411.41K  /  12 Page

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    FDP5N50U12

Fairchild Semiconductor
Part No. FDP5N50U12
OCR Text ...v, v gs = 0v - - 25 a v ds = 400v, t c = 125 o c - - 250 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th...s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 485 650 pf c oss output capacitance - 6...
Description N-Channel MOsFET, FRFET 500V, 4A, 2.0Ω

File Size 381.29K  /  10 Page

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