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  36-40ghz Datasheet PDF File

For 36-40ghz Found Datasheets File :: 84    Search Time::1.797ms    
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    CHA3694-QDG

United Monolithic Semiconductors
Part No. CHA3694-QDG
OCR Text ...6 -10 -14 -18 30 31 32 33 34 35 36 37 38 39 40 41 42 43 Broadband performance 31-40GHz 18dB gain 25dBm output IP3 19dB gain control range 24LQFN4x4 ESD protected (see page 9) Frequency (GHz) Main Characteristics Tamb. = +25 ...
Description 31-40GHz Variable Gain Amplifier

File Size 415.69K  /  10 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. FMM5704X
OCR Text 36-40ghz LNA MMIC FEATURES * Low Noise Figure: NF = 2.0dB (Typ.) @ f=40 GHz * High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz * Wide Frequency Band: 36-40 GHz * High Output Power: 9dBm (Typ.) @ f=40 GHz * Impedance Matched Zin/Zout =...
Description 36-40ghz LNA MMIC

File Size 1,253.42K  /  4 Page

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    CHE1270A CHE1270A-98F_00 CHE1270A-98F/00

United Monolithic Semic...
United Monolithic Semiconductors
Part No. CHE1270A CHE1270A-98F_00 CHE1270A-98F/00
OCR Text ...4 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 Freq (GHz) Transmitted power detection versus Input power 10000 12 GHz 32GHz Vdetect= Vref-Vdet (mV) 1000 17GHz 37GHz 22GHz 40GHz 27GHz 100 10 1 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 ...
Description 12-40GHz Wide Band Detector

File Size 218.62K  /  6 Page

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    CHE1270-QAG CHE1270-QAG_20 CHE1270-QAG_21 CHE1270-QAG/21 CHE1270-QAG/20

United Monolithic Semiconductors
Part No. CHE1270-QAG CHE1270-QAG_20 CHE1270-QAG_21 CHE1270-QAG/21 CHE1270-QAG/20
OCR Text ... Loss (12 - 36GHz) Return Loss (36 - 40GHz) VDC IDC Bias Voltage Bias Current dB dB V A (1) These values are representative of onboard measurements as defined on the drawing 96272-B (page 8) with 27k resistor in parallel on Vdet and V...
Description 12-40GHz Wide Band Detector

File Size 435.45K  /  8 Page

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    CHA2294-99F_00 CHA229407

United Monolithic Semiconductors
Part No. CHA2294-99F_00 CHA229407
OCR Text ... 20 18 16 14 12 10 8 6 4 2 0 35 36 Main Features Frequency range: 35-40GHz 4.0dB Noise Figure. 22dB gain Gain control range: 15dB Low DC power consumption, 120mA @ 5V Chip size: 2.32 X 1.235 X 0.10 mm Gain (dB) NF (dB) 37 38 Fr...
Description 35-40GHz Low Noise, Variable Gain Amplifier

File Size 177.79K  /  6 Page

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    CHA209107

United Monolithic Semiconductors
Part No. CHA209107
OCR Text 36-40ghz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2091 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process: 0.25m gate length, via holes through the ...
Description 36-40ghz Low Noise Amplifier

File Size 187.54K  /  8 Page

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    CHA5294

United Monolithic Semiconductors
Part No. CHA5294
OCR Text ...cy GHz Pout@-1dB (dBm) 36 38 40 Main Characteristics Tamb. = 25C Symbol Fop G P1dB Id Parameter Operating frequency ...40GHz Medium Power Amplifier Electrical Characteristics on wafer Parameter Operating frequency ...
Description 30-40GHz Medium Power Amplifier

File Size 140.76K  /  6 Page

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    CHA239406

United Monolithic Semiconductors
Part No. CHA239406
OCR Text 36-40ghz Very Low Noise High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2394 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication s...
Description 36-40ghz Very Low Noise High Gain Amplifier

File Size 190.96K  /  8 Page

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    CHT3091A99F_00 CHT3091A99F/00 CHT3091A06

United Monolithic Semiconductors
United Monolithic Semic...
Part No. CHT3091A99F_00 CHT3091A99F/00 CHT3091A06
OCR Text ...000 32.000 33.000 34.000 35.000 36.000 37.000 38.000 39.000 40.000 MS11 mod dB -2,53E+01 -2,47E+01 -2,46E+01 -2,44E+01 -2,42E+01 -2,39E+01 -2,36E+01 -2,32E+01 -2,29E+01 -2,26E+01 -2,22E+01 -2,19E+01 -2,16E+01 -2,13E+01 -2,10E+01 -2,07E+01 -...
Description DC-40GHz ATTENUATOR

File Size 273.95K  /  8 Page

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    EIC1415-4 EIC1415-4NH

Excelics Semiconductor, Inc.
Part No. EIC1415-4 EIC1415-4NH
OCR Text ...t Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 5.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -43...40GHz VDS = 10 V, IDSQ 1100mA Gain at 1dB Compression f = 14.40-15.40GHz VDS = 10 V, IDSQ 1100mA G...
Description 14.40-15.40GHz 4-Watt Internally-Matched Power FET

File Size 114.32K  /  2 Page

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