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2a 650v Datasheet PDF File

For 2a 650v Found Datasheets File :: 197 Search Time::1.938ms
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				SemiHow Co.,Ltd.
Part No.	HFW5N65S HFI5N65S
OCR Text	... temperature 2. L=18.9mH, IAS=4.2a, VDD=50V, RG=25, Starting TJ =25C 3. ISD4.2a, di/dt200A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature SEMIHOW REV...
Description	650v N-Channel MOSFET
File Size	934.30K / 8 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP04N60R-A-HF
OCR Text	...on-resistance 2 v gs =10v, i d =2a - - 2.5 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =2a - 3.4 - s i dss drain-source leakage current v ds =480v, v gs =0v - - 100 ua i gss ...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	56.15K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP04N70BP-A
OCR Text	... (Tj=150 C) o o VGS=10V, ID=2a VDS=VGS, ID=250uA VDS=10V, ID=2a VDS=600V, VGS=0V VDS=480V,VGS=0V VGS=30V ID=4A VDS=480V VGS=10V VDD=300V ID=4A RG=10,VGS=10V RD=75 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Ga...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	68.49K / 6 Page	View it Online	Download Datasheet

				A-POWER[Advanced Power Electronics Corp.]
Part No.	AP01L60P AP04N70BP
OCR Text	...nt (Tj=150 C) o VGS=10V, ID=2a VDS=VGS, ID=250uA VDS=10V, ID=2a VDS=600V, VGS=0V VDS=480V,VGS=0V VGS= 30V ID=4A VDS=480V VGS=10V VDD=30...650v = BVDSS 700V AP04N70BP 2.5 2 T C =25 o C 2 V G =10V V G =6.0V V G =5.0V 1.5 ...
Description	N-CHANNEL ENHANCEMENT MODE
File Size	81.28K / 6 Page	View it Online	Download Datasheet

				SavantIC
Part No.	2N6674
OCR Text	...taining voltage 2n6675 i c =0.2a ;i b =0 400 v v cesat-1 collector-emitter saturation voltage i c =10a; i b =2a 1.0 v v cesat-2 c...650v; i e =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 1.0 ma h fe-1 dc cu...
Description	(2N6674 / 2N6675) Silicon Power Transistor
File Size	138.42K / 3 Page	View it Online	Download Datasheet

				NTE Electronics, Inc. NTE[NTE Electronics]
Part No.	NTE5411 NTE5416 NTE5415
OCR Text	.... . . . . . . . . . . . . . . 0.2a Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Operating Junction Temperature Range, TJ . . . . . . . . . . . . ....
Description	Silicon Controlled Rectifier (SCR) 4 Amp / Sensitive Gate Silicon Controlled Rectifier (SCR) 4 Amp, Sensitive Gate Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate
File Size	21.13K / 3 Page	View it Online	Download Datasheet

				SemiHow Co.,Ltd.
Part No.	HFS10N65S
OCR Text	...mperature 2. l=14.2mh, i as =9.2a, v dd =50v, r g =25 ? , starting t j =25 c 3. i sd 9.2a, di/dt200a/s, v dd bv dss , starting t j =25 c 4. pulse test : pulse width 300s, duty cycle 2% 5. essentially independent of operating te...
Description	650v N-Channel MOSFET
File Size	877.94K / 7 Page	View it Online	Download Datasheet

				Hi-Sincerity Mocroelectronics
Part No.	H02N65
OCR Text	...c (v dd =100v, v gs =10v, i l =2a, l=10mh, r g =25 ) 120 mj t l maximum lead temperature for soldering purposes, 1/8? from case for 1...650v, v gs =0v) - - 5 ua i dss drain-source leakage current (v ds =480v, v gs =0v, t j =125 ...
Description	N-Channel Power Field Effect Transistor
File Size	124.60K / 6 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	2N6931 2N6932
OCR Text	...specified PARAMETER 2N6931 IC=0.2a ;L=25mH 2N6932 V(BR)EBO VCEsat VBEsat Emitter-base breakdown voltage Collector-emitter saturation voltage...650v; VBE=-1.5V TC=100ae VEB=8V; IC=0 IC=10A ; VCE=3V f=1MHz;VCB=10V CONDITIONS 2N6931 2N6932 ...
Description	Silicon NPN Power Transistors
File Size	117.02K / 3 Page	View it Online	Download Datasheet

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