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  264-byte Datasheet PDF File

For 264-byte Found Datasheets File :: 372    Search Time::1.25ms    
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    AT45DB641E AT45DB641E-SHN-T AT45DB641E-MHN-T AT45DB641E-SHN-B AT45DB641E-MWHN-Y

List of Unclassifed Manufacturers
Part No. AT45DB641E AT45DB641E-SHN-T AT45DB641E-MHN-T AT45DB641E-SHN-B AT45DB641E-MWHN-Y
OCR Text ...age size ? 256 bytes per page ? 264 bytes per page (default) ? page size can be factory pre-configured for 256 bytes ? two fully independent...byte/page program (1 to 256/264 bytes) directly into main memory ? buffer write | buffer to main mem...
Description 64-Mbit DataFlash (with Extra 2-Mbits), 1.7V Minimum SPI Serial Flash Memory

File Size 2,398.98K  /  72 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K9F1608W0A-TCB0 K9F1608W0A-TIB0
OCR Text ... program operation programs the 264-byte page in typically 250 m s and an erase operation can be performed in typ- ically 2ms on a 4k-byte block. data in the page can be read out at 80ns cycle time per byte. the i/o pins serve as the ports...
Description    2M x 8 Bit NAND Flash Memory
TV 37C 37#16 PIN RECP 200万8位NAND闪存
TV 128C 128#22D SKT RECP

File Size 446.53K  /  25 Page

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    AT45DB011-SI AT45DB011-SC AT45DB011-JC AT45DB011-JI AT45DB011-XC

ATMEL Corporation
聚兴科技股份有限公司
Part No. AT45DB011-SI AT45DB011-SC AT45DB011-JC AT45DB011-JI AT45DB011-XC
OCR Text ...erase and program) ? 512 pages (264 bytes/page) main memory  optional page and block erase operations  one 264-byte sram data buffer  internal program and control timer  fast page program time ? 7 ms typical  120 s typical page to buff...
Description    1-megabit 2.7-volt Only Serial DataFlash

File Size 151.65K  /  20 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KAB02D100M-TLGP KAB04D100M-TLGP KAB03D100M-TLGP KAB02D100M-TNGP KAB03D100M-TNGP KAB04D100M-TNGP KAB01D100M-TNGP KAB02D100M-TLGP0 KAB03D100M-TLGP0
OCR Text ...56) words dq 0 ~ dq 15 1 page = 264 words 1 block = 264 words x 32 pages = (8k + 256) words 1 device = 264 words x 32pages x 10...byte mode word mode bank1 bank1 ba134 1 1 1 1 1 1 1 1 1 1 8/4 7fe000h-7fffffh 3ff000h-3fffffh ba13...
Description Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel
Multi-Chip Package MEMORY
CONNECTOR ACCESSORY
Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel
SPECIALTY MEMORY CIRCUIT, PBGA80

File Size 1,394.44K  /  72 Page

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    K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G16Q0A

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G16Q0A
OCR Text ...s on the 528-byte(x8 device) or 264-word(x16 device) page and an erase operation can be performed in typically 2ms on a 16K-byte(x8 device) or 8K-word(x16 device) block. Data in the data register can be read out at 50ns(1.8V device : 60ns) ...
Description 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

File Size 902.07K  /  43 Page

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    ATMEL CORP
Part No. B041B-JC
OCR Text ...rase and program) ? 2048 pages (264 bytes/page) main memory  optional page and block erase operations  two 264-byte sram data buffers ? allows receiving of data while reprogramming of nonvolatile memory  continuous read capability throu...
Description 4M X 1 FLASH 2.7V PROM, PQCC32

File Size 249.98K  /  29 Page

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    http://
Part No. AT45DB041B-SI
OCR Text ...rase and program) ? 2048 pages (264 bytes/page) main memory ? supports page and block erase operations ? two 264-byte sram data buffers ? allows receiving of data while reprogramming the flash memory array ? continuous read capability thro...
Description 4-megabit 2.5-volt or 2.7-volt DataFlash

File Size 314.50K  /  35 Page

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    K9F1608W0A- K9F1608W0A-TCB0 K9F1608W0A-TIB0 K9F1G08D0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1608W0A- K9F1608W0A-TCB0 K9F1608W0A-TIB0 K9F1G08D0M
OCR Text ... + 128)Byte - Status Register * 264-byte Page Read Operation - Random Access : 10s(Max.) - Serial Page Access : 80ns(Min.) * Fast Write Cycle Time - Program time : 250s(typ.) - Block Erase time : 2ms (typ.) * Command/Address/Data Multiplexe...
Description -2M x 8 Bit NAND Flash Memory
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

File Size 440.97K  /  25 Page

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    聚兴科技股份有限公司
Atmel, Corp.
Part No. AT45DB081B-TC-2.5 AT45DB081B-TI AT45DB081B-RI-2.5 AT45DB081B-CC-2.5 AT45DB081B-RC-2.5 AT45DB081B-CNU AT45DB081B-TU AT45DB081B-CNI AT45DB081B-TI-2.5 AT45DB081B-CNC
OCR Text ...rase and program) ? 4096 pages (264 bytes/page) main memory  supports page and block erase operations  two 264-byte sram data buffer s ? allows receiving of data while reprogramming of nonvolatile memory  continuous read capabilit y thr...
Description IC DATAFLASH 8MBIT COMM 8CASON 1081344 X 8 FLASH 2.7V PROM, DSO8

File Size 366.17K  /  33 Page

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    Atmel
Part No. AT45DB011B
OCR Text ...erase and program) ? 512 pages (264 bytes/page) main memory  supports page and block erase operations  one 264-byte sram data buffer  continuous read capability through entire array ? ideal for code shadowing applications  fast page pro...
Description 1M bit, 2.7-Volt Only Serial-Interface Flash with One 264-byte SRAM Buffer

File Size 209.26K  /  32 Page

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