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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K9F1608W0A-TCB0 K9F1608W0A-TIB0
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| OCR Text |
... program operation programs the 264-byte page in typically 250 m s and an erase operation can be performed in typ- ically 2ms on a 4k-byte block. data in the page can be read out at 80ns cycle time per byte. the i/o pins serve as the ports... |
| Description |
2M x 8 Bit NAND Flash Memory TV 37C 37#16 PIN RECP 200万8位NAND闪存 TV 128C 128#22D SKT RECP
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| File Size |
446.53K /
25 Page |
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it Online |
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ATMEL CORP
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| Part No. |
B041B-JC
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| OCR Text |
...rase and program) ? 2048 pages (264 bytes/page) main memory optional page and block erase operations two 264-byte sram data buffers ? allows receiving of data while reprogramming of nonvolatile memory continuous read capability throu... |
| Description |
4M X 1 FLASH 2.7V PROM, PQCC32
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| File Size |
249.98K /
29 Page |
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it Online |
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http://
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| Part No. |
AT45DB041B-SI
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| OCR Text |
...rase and program) ? 2048 pages (264 bytes/page) main memory ? supports page and block erase operations ? two 264-byte sram data buffers ? allows receiving of data while reprogramming the flash memory array ? continuous read capability thro... |
| Description |
4-megabit 2.5-volt or 2.7-volt DataFlash
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| File Size |
314.50K /
35 Page |
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it Online |
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Atmel
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| Part No. |
AT45DB011B
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| OCR Text |
...erase and program) ? 512 pages (264 bytes/page) main memory supports page and block erase operations one 264-byte sram data buffer continuous read capability through entire array ? ideal for code shadowing applications fast page pro... |
| Description |
1M bit, 2.7-Volt Only Serial-Interface Flash with One 264-byte SRAM Buffer
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| File Size |
209.26K /
32 Page |
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it Online |
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Price and Availability
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