20v 0.15a pdf Datasheet P4 Full Text Search --- IC-ON-LINE


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20v 0.15a Datasheet PDF File

For 20v 0.15a Found Datasheets File :: 3071 Search Time::1.313ms
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				MICREL[Micrel Semiconductor]
Part No.	MIC5014-1 MIC5014BM MIC5014BN MIC5015BM MIC5015BN
OCR Text	..., and inductive load spikes of -20v. The driver's overvoltage shutdown feature turns off the external MOSFET at approximately 35V to protect...0 VIN De-Asserted 10 VIN Asserted 60 VIN De-Asserted 10 VIN Asserted 25 Digital Low Level Digital Hi...
Description	Low-Cost High- or Low-Side MOSFET Driver Final Information
File Size	75.08K / 12 Page	View it Online	Download Datasheet

				Micrel Semiconductor, Inc. MICREL[Micrel Semiconductor]
Part No.	MIC5014 MIC5014BN MIC5014BM MIC5015BN MIC5015BM
OCR Text	..., and inductive load spikes of -20v. The driver's overvoltage shutdown feature turns off the external MOSFET at approximately 35V to protect...0 VIN De-Asserted 10 VIN Asserted 60 VIN De-Asserted 10 VIN Asserted 25 Digital Low Level Digital Hi...
Description	Low-Cost High- or Low-Side MOSFET Driver(低成低边MOS场效应管驱动低成本，高或低侧MOSFET驱动器（低成本高/低边马鞍山场效应管驱动器
File Size	85.04K / 9 Page	View it Online	Download Datasheet

				MICREL[Micrel Semiconductor]
Part No.	MIC5016 MIC5016BN MIC5016BWM MIC5017BN MIC5017BWM
OCR Text	..., and inductive load spikes of -20v. The driver's overvoltage shutdown feature turns off the external MOSFETs at approximately 35V to protec...0 10 60 10 25 Max 25 10 25 100 25 35 0.8 Units A mA A A V A A pF V V ms s s s V 2.0 -2.0 -2.0 ...
Description	Low-Cost Dual High- or Low-Side MOSFET Driver
File Size	129.13K / 9 Page	View it Online	Download Datasheet

				SIPEX[Sipex Corporation]
Part No.	SP6132EB SP6132CU
OCR Text	...6M C3225X5R0J476M ERJ-3EKF3322V 20v, 21A, 4.5mOhm 6.8uH, 2.54Arms,46mOhm 47uF Ceramic X5R 6.3V 47uF Ceramic X5R 6.3V 332K Ohm, 1% Layout Size SO-8 Layout Size 7.8 x 7.0 mm Layout Size 1210 Layout Size 1210 Layout Size 0603 C1 IN and C2 OUT ...
Description	Evaluation Board Manual
File Size	403.35K / 9 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU2
OCR Text	...1.3 1.2 VGS=10V 1.1 1.0 0.9 VGS=20v 60 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 40 TJ = +125C TJ = +25C 0 TJ = -55C 20 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACT...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	110.72K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU3
OCR Text	...1.3 1.2 VGS=10V 1.1 1.0 0.9 VGS=20v 60 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 40 TJ = +125C TJ = +25C 0 TJ = -55C 20 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACT...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	111.65K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50GF120JRD
OCR Text	...-Emitter Leakage Current (VGE = 20v, VCE = 0V) 2 I CES I GES TBD 100 mA nA 052-6257 Rev A CAUTION: These Devices are Sensitive...0.5VCES Resistive Switching (25C) VGE = 15V I C = I C2 VCC = 0.8VCES RG = 5 I C = I C2 MIN TYP MAX U...
Description	Fast IGBT & FRED 1200V 75A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
File Size	51.80K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT50GF60B2RD APT50GF60LRD
OCR Text	...-Emitter Leakage Current (VGE = 20v, VCE = 0V) 2 2 I CES I GES TBD 100 CAUTION: These Devices are Sensitive to Electrostatic Disch...0.5VCES Resistive Switching (25C) VGE = 15V I C = I C2 VCC = .8VCES I C = I C2 MIN TYP MAX UNIT 2...
Description	Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
File Size	112.47K / 7 Page	View it Online	Download Datasheet

				Harris, Corp. Fairchild Semiconductor HARRIS[Harris Corporation]
Part No.	HGTG12N60C3D
OCR Text	...) IC = 250A, VCE = VGE VGE = 20v TJ = 150oC, VGE = 15V, RG = 25, L = 100H Gate-Emitter Leakage Current Switching SOA IGES SSOA V...0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20v - 7.6 48 62 14 16 270 210 380 900 1....
Description	36 MACROCELL 3.3 VOLT ISP CPLD 4A00V的，的ufs系列N沟道IGBT的与反平Hyperfast二极 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	102.34K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5Y5305CM
OCR Text	...-44V, VGS = 0V, TJ =125C VGS = -20v VGS = 20v VGS =-10V, ID = -16A VDS = -44V VDD = -28V, ID = -16A, RG = 7.5 IGSS IGSS Qg Q gs Q gd td(o...0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = -25V f = 1.0MHz C...
Description	POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.065ohm/ Id=-18A) POWER MOSFET P-CHANNEL(Vdss=-55V Rds(on)=0.065ohm Id=-18A) POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-18A*) -55V Single P-Channel Hi-Rel MOSFET in a TO-257AA package
File Size	106.37K / 7 Page	View it Online	Download Datasheet

For 20v 0.15a Found Datasheets File :: 3071 Search Time::1.313ms
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