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  200-1200 Datasheet PDF File

For 200-1200 Found Datasheets File :: 29021    Search Time::2.078ms    
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    AS1117 AS1117M1 AS1117M1-X AS1117M3 AS1117M3-X AS1117R AS1117R-X AS1117S AS1117S-X AS1117T AS1117T-X AS1117U AS1117U-X A

ALPHA Semiconductor
Alpha Industries Inc
ETC[ETC]
ALPHA[Alpha Industries]
Alpha Industries, Inc.
Part No. AS1117 AS1117M1 AS1117M1-X AS1117M3 AS1117M3-X AS1117R AS1117R-X AS1117S AS1117S-X AS1117T AS1117T-X AS1117U AS1117U-X AS1117R-5V AS1117R-2.85V AS1117R-1.5V AS1117R-3.3V AS1117S-3V AS1117M1-3V AS1117U-5V AS1117T-2.5V AS1117T-2.85V AS1117M1-2.85V AS1117M1-5V AS1117M1-2.5V AS1117M3-5V AS1117S-2.5V
OCR Text ....381) 0.050 TYP (1.27 TYP) 0.200 0.010 (5.080 0.254) 0.100 0.010 (2.540 0.254) 0.015 0.010/-0.002 0.032 0.005 (0.813 0.127) (0.381 0.254/-0.051) 0.015 0.010/-0.015 (2.667 0.254/-0.381) Alpha Semiconductor Inc. 1031 Serpe...
Description 800mA low dropout regulator 2,5V
800mA low dropout regulator 3V
800mA low dropout regulator 1,5V
800mA low dropout regulator 5V
800mA Low Dropout Regulator SCSI-II Active Terminator
AB 2C 2#16 SKT RECP
800mA low dropout regulator 2,85V
800mA low dropout regulator 3,3V

File Size 75.37K  /  11 Page

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    BUH1215 4496

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BUH1215 4496
OCR Text ... Value 1500 700 10 16 22 9 12 200 -65 to 150 150 Uni t V V V A A A A W o o C C 1/7 January 1999 BUH1215 THERMAL DATA R t hj...1200 sin 106 t V 5 IC = 6 A I B1 = 1 A 3.5 180 s ns Pulsed: Pulse duration = 300 s, ...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
From old datasheet system

File Size 73.01K  /  7 Page

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    BUPD1520

Power Innovations Ltd
Power Innovations Limited
Part No. BUPD1520
OCR Text ...0 10 100 1000 1 0 0 200 400 600 800 1000 1200 1400 1600 VCE - Collector-Emitter Voltage - V VCE - Collector-Emitter Voltage - V Figure 2. Figure 3. PRODUCT INFORMATION 3 BUPD1520 NPN SILICON T...
Description NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

File Size 114.07K  /  5 Page

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    BUX48C BUV48C BUV48CFI

STMICROELECTRONICS[STMicroelectronics]
Part No. BUX48C BUV48C BUV48CFI
OCR Text ...W ATT 218 55 -65 to 150 150 175 200 Un it V V V V A A A A A W o o -65 to 200 -65 to 150 C C 1/6 January 2000 BUX48C/BUV48C/B...1200 V V CE = 1200 V V CE = 1200 V V CE = 1200 V V CE = V CEO V EB = 6 V I C = 100 mA I C = 0.5 A L ...
Description    HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

File Size 47.06K  /  6 Page

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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text ...0 s 10 1 100 s 1 ms 200 150 100 50 0 0 20 40 60 80 100 120 C 160 10 -1 0 10 10 1 10 0 10 ms DC 10 2 10 3 ...1200 V Ciss 10 0 6 Coss 4 2 0 0.0 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 C 0.9 -1 Crss 0 5 10 15 2...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

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    DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25

Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
Part No. DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25
OCR Text ...nge Clamping force -55 11.5 175 200 13.5 o Min. dc Anode dc - Max. 0.032 0.064 0.064 0.008 0.016 185 Units o C/W o C/W C...1200 Thermal Impedance - junction to case, Rth(j-c) - (C/W) Fig.5 Maximum reverse recovery curre...
Description Rectifier Diode 1849 A, 2900 V, SILICON, RECTIFIER DIODE

File Size 94.85K  /  7 Page

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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ...es 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM antiparallel diodes with ult...1200 100 200 200 200 20 2500 520 270 -40 to +150 -40 to +125 Units V A V W C Thermal / Mec...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ...es 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM antiparallel diodes with ult...1200 125 250 250 250 20 2500 625 325 -40 to +150 -40 to +125 Units V A V W C Thermal / Mec...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

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