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CWR06 2SC5570 AN440 252153B SRA2201M 252153B 05488 GP410
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  19a Datasheet PDF File

For 19a Found Datasheets File :: 856    Search Time::1.688ms    
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    FMH19N60ES

Fuji Electric
Part No. FMH19N60ES
OCR Text ...gate charge q g v cc =300v i d =19a v gs =10v - 74 111 nc gate-source charge q gs - 23 34.5 gate-drain charge q gd - 25 38 gate-drain crossover charge q sw - 9 14 avalanche capability i av l=1.71mh, t ch =25c 19 - - a diode forward on-volta...
Description N-CHANNEL SILICON POWER MOSFET

File Size 468.19K  /  5 Page

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    ADP3157 ADP3157JR ADP3157JR-REEL

AD[Analog Devices]
Part No. ADP3157 ADP3157JR ADP3157JR-REEL
OCR Text ...03 10BQ015 VO 1.3V TO 3.5V 0-19a RTN CCOMP 3600pF 220 220 1nF Figure 2. Typical VRM8.2/8.3/8.4 Compliant Core DC/DC Converter Circuit VCC DRIVE1 DRIVE2 PGND 12 14 13 AGND 5 PWRGD 11 SENSE+ SENSE- DELAY VREF ...
Description VRM 8.2/3/4 Buck Controller
5-Bit Programmable Synchronous Controller for Pentium III Processors

File Size 171.37K  /  12 Page

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    ST Microelectronics
Part No. STB45NF06L
OCR Text ...rce on resistance v gs =5v,i d =19a 0.024 0.03 w v gs =10v,i d =19a 0.022 0.028 symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15v , i d =19 a 24 s c iss input capacitance v ds =25v,f=1mhz,v gs ...
Description N-CHANNEL POWER MOSFET

File Size 371.91K  /  10 Page

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    BSS192P

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BSS192P
OCR Text ... Reverse diode dv/dt IS =-0.19a, VDS =-200V, di/dt=-200A/s, Tjmax =150C Gate source voltage Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-07-25 Preliminary dat...
Description Low Voltage MOSFETs - Small Signal MOSFET, -250V, SOT-89, RDSon = 12
SIPMOS Small-Signal-Transistor
OptiMOS -P Small-Signal-Transistor

File Size 78.21K  /  8 Page

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    BTS94900

Infineon Technologies AG
Part No. BTS94900
OCR Text ...00 ms, r i = 2 ? , i d =0,5*19a t d = 400 ms, r i = 2 ? , i d = 19a v ld 110 92 din humidity category, din 40 040 e iec climatic category; din iec 68-1 40/150/56 thermal resistance junction - case: r thjc 0.7 k/w junction - amb...
Description Smart Lowside Power Switch

File Size 216.41K  /  11 Page

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    BCW72LT1 ON0181

Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
Part No. BCW72LT1 ON0181
OCR Text ... 50 t, TIME (ms) 100 200 FIGURE 19a DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5 0.2 0.01 0.01 0.02 ...
Description From old datasheet system
General Purpose Transistor(NPN Silicon)

File Size 415.84K  /  8 Page

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    813-SL70.0M-19A14

Oscilent Corporation
Part No. 813-SL70.0M-19a14
OCR Text ...roduct description 813-sl70.0m-19a 70.0 mhz if saw filter 18.44 mhz bandwidth specification contents o mechanical dimensions o test circuit o maximum ratings o electrical specification o frequency response o smith chart o wide...
Description 70.0 MHz IF SAW Filter 18.44 MHz Bandwidth

File Size 176.21K  /  6 Page

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    ST Microelectronics
Part No. STP45NF06L
OCR Text ...rce on resistance v gs =5v,i d =19a 0.024 0.03 w v gs =10v,i d =19a 0.022 0.028 symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15v , i d =19 a 24 s c iss input capacitance v ds =25v,f=1mhz,v gs ...
Description N-Channel POWER MOSFET

File Size 516.92K  /  10 Page

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    FDS7060N7 FDS7060N7F077

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. FDS7060N7 FDS7060N7F077
OCR Text ...ns Single Pulse, VDD=30V, ID = 19a Min Typ Max Units 360 19 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain ...
Description 30V N-Channel PowerTrench MOSFET 19 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 208.55K  /  7 Page

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