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  10a 600v silicon carbide dual Datasheet PDF File

For 10a 600v silicon carbide dual Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    INFINEON[Infineon Technologies AG]
Part No. SIDC24D60SIC3
Description silicon carbide Ultrafast Schottky Diode Chips
silicon carbide Schottky Diode

File Size 53.69K  /  4 Page

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    SHD62003109 SHD620031P

Sensitron Semiconductor
Part No. SHD62003109 SHD620031P
Description HERMETIC silicon carbide RECTIFIER 4 A, silicon carbide, RECTIFIER DIODE
HERMETIC silicon carbide RECTIFIER 8 A, silicon carbide, RECTIFIER DIODE

File Size 65.45K  /  3 Page

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    STPSC10TH13TI

STMicroelectronics
Part No. STPSC10TH13TI
Description    dual 650 V power Schottky silicon carbide diode in series

File Size 255.63K  /  8 Page

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    INFINEON[Infineon Technologies AG]
Part No. Q67040-S4374 SDB20S30 Q67040-S4419 SDP20S30 SDB20S30SMD
Description silicon carbide Schottky Diodes - 2x10a diode in TO263 package
silicon carbide Schottky Diodes - 2x10a diode in TO220-3 package
From old datasheet system

File Size 204.92K  /  8 Page

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    ISL9K860P3

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. ISL9K860P3
Description 8A, 600v Stealth?/a> dual Diode
8A, 600v Stealth dual Diode
8A/ 600v Stealth dual Diode
8A, 600v Stealth⑩ dual Diode
8A, 600v Stealthdual Diode

File Size 115.00K  /  6 Page

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    Infineon
Part No. SDP10S30 SDB10S30SMD SDT10S30
Description silicon carbide Schottky Diodes - 10a diode in TO220-3 package
silicon carbide Schottky Diodes - 10a diode in TO263 package
silicon carbide Schottky Diodes - 10a diode in TO220-2 package

File Size 575.47K  /  9 Page

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    RHRP860CC RHRP840CC

FAIRCHILD SEMICONDUCTOR CORP
Part No. RHRP860CC RHRP840CC
Description 8 A, 600 V, silicon, RECTIFIER DIODE, TO-220AB
8A, 400V - 600v Hyperfast dual Diodes

File Size 356.14K  /  5 Page

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    CREE POWER
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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    SSR20C100CT

Solid States Devices, Inc
Part No. SSR20C100CT
Description Schottky silicon carbide

File Size 78.69K  /  2 Page

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    CREE
Part No. CPMF-1200-S080B
Description silicon carbide MOSFET

File Size 803.48K  /  10 Page

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For 10a 600v silicon carbide dual Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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