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  0.5-12ghz Datasheet PDF File

For 0.5-12ghz Found Datasheets File :: 319    Search Time::5.14ms    
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    2SK1646

Sanyo Semicon Device
Part No. 2SK1646
OCR Text ...unit : mm 2134A [2SK1646] 1.9 0.95 0.95 0.4 * * * Ideal for use in C to X-band local oscillator and amplifier. The chip surface i...5 0.16 0 to 0.1 4 3 1.5 2.5 1 2 0.95 0.85 2.9 0.5 0.6 0.8 1 : Gate 2 ...
Description FOR C TO X-BAND LOCAL OSCILLATOR AND AMPLIFIER

File Size 33.24K  /  4 Page

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    EFC120 EFC120B EFC120B-100F

List of Unclassifed Manufacturers
ETC
Excelics Semiconductor
Part No. EFC120 EFC120B EFC120B-100F
OCR Text ....0dB TYPICAL POWER GAIN AT 8GHz 0.3 X 1200 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH...5 360 mA mS -4.0 V V V o Drain Breakdown Voltage Igd=1.2mA Source Breakdown Voltage ...
Description From old datasheet system
LOW DISTORTION GAAS POWER FET

File Size 22.62K  /  2 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. FHC40LG
OCR Text 0.3dB (Typ.)@f=4GHz * High Associated Gain: 15.5dB (Typ.)@f=4GHz * Lg 0.15m, Wg = 280m * Gold Gate Metallization for High Reliability * Cos...5 -3.0 Unit V V mW C C Note 290 -65 to +175 175 ELECTRICAL CHARACTERISTICS (Ambient Temp...
Description Super Low Noise HEMT

File Size 82.08K  /  5 Page

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    FLK017XP

Eudyna Devices Inc
Part No. FLK017XP
OCR Text ...nts should not exceed 1.34 and -0.05 mA respectively with gate resistance of 3000. 3. The operating channel temperature (Tch) should not exc...5 19.5 7.0 Limit Typ. Max. 60 90 30 -2.0 20.5 8.0 26 2.5 7 11 65 -3.5 130 Unit mA mS V V dBm dB % dB...
Description GaAs FET & HEMT Chips

File Size 54.22K  /  4 Page

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    FSX027X

Eudyna Devices Inc
Part No. FSX027X
OCR Text ...ents should not exceed 1.4 and -0.2 mA respectively with gate resistance of 1000. 3. The operating channel temperature (Tch) should not exce...5.4mA IGS = -5.4A Min. 70 -0.7 -5.0 Limit Typ. Max. 110 100 -1.2 2.5 9.5 24.5 24.5 23.5 14.0 10.0 6....
Description GAAS FET & HEMT CHIPS

File Size 52.50K  /  4 Page

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    PE3 SVC6310

MA-Com
Tyco Electronics
Part No. PE3 SVC6310
OCR Text 0.5 m MBE MESFET Technology for High Power Applications MMICs up to 18 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging PE3 V2.00 Typical RF Performance FC06 (6X150) 900 um FET Pa...
Description 25-1000 MHz, GaAs foundry service PROCESS PE3
GAAS FOUNDRY SERVICES PROCESS PE3
GaAs Foundry Services PROCESS PE3

File Size 26.25K  /  2 Page

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    FMM5063X

Eudyna Devices Inc
Part No. FMM5063X
OCR Text 0 dBm (Typ.) *High Linear Gain; GL = 30 dB(Typ) *Wide Frequency Band : 12.75 - 15.4 GHz *Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM...5 13 13.5 14 14.5 15 15.5 16 16.5 Frequency [GHz] 18 -12 -10 -8 -6 -4 -2 0 2 4 6 8 Input Power [d...
Description KU-BAND POWER AMPLIFIER MMIC

File Size 579.91K  /  14 Page

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    EPA025A-70

Electronic Theatre Controls, Inc.
Excelics Semiconductor, Inc.
List of Unclassifed Manufacturers
Part No. EPA025A-70
OCR Text ...CAL POWER GAIN AT 18GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASS...5 9.5 TYP 21.5 21.5 11.0 8.0 47 0.85 11.0 75 80 -1.0 -15 -14 370* o All Dimensions In mils. ...
Description High Efficiency Heterojunction Power FET 高效率的异质结功率场效应

File Size 31.12K  /  2 Page

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    FMA3011

Filtronic Compound Semiconductors
Part No. FMA3011
OCR Text ...nd Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3011 ...5 -10 Return Loss (dB) -15 -20 -25 -30 27 Gain (dB) 26 25 24 23 22 21 20 12 13 14 Frequency (GHz)...
Description 12.7-16GHZ MMIC POWER AMPLIFIER

File Size 251.26K  /  9 Page

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    FMA3014

Filtronic Compound Semiconductors
Part No. FMA3014
OCR Text ...nd Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3014 ...5 35 Return Loss (dB) 30 Gain (dB) -10 25 -15 20 -20 15 -25 10 10 1...
Description 12.7-16GHZ MMIC LIMITING AMPLIFIER

File Size 196.10K  /  6 Page

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