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-8a Datasheet PDF File

For -8a Found Datasheets File :: 16946 Search Time::1.281ms
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				BOWEI Integrated Circuits CO.,LTD.
Part No.	HE021-8a
OCR Text
Description	8 way 0 power Combiner/Splitter
File Size	60.85K / 1 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3708 IRF3708L IRF3708S
OCR Text	...VDS = 15V, ID = 50A --- ID = 24.8A --- nC VDS = 15V --- VGS = 4.5V 21 VGS = 0V, ID = 24.8A, VDS = 15V --- VDD = 15V --- ID = 24.8A ns --- RG = 0.6 --- VGS = 4.5V --- VGS = 0V --- VDS = 15V --- pF = 1.0MHz Avalanche Characteristics Sy...
Description	Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条） Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
File Size	137.00K / 10 Page	View it Online	Download Datasheet

				SYNC POWER Crop.
Part No.	SPP2345
OCR Text	...70m ? @v gs =-4.5v ? -20v/-2.8a,r ds(on) = 85m ? @v gs =-2.5v ? -20v/-2.3a,r ds(on) =110m ? @v gs =-1.8v ? super high density cell design for extremely low r ds (on) ? exceptional on-resistance and maximum dc current capabili...
Description	P-Channel Enhancement Mode MOSFET
File Size	226.58K / 8 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
Part No.	SCG4153 SCG4153-15
OCR Text	...ische bauelemente scg4153 0.8a , 20v , r ds(on) 310 m ? n-channel enhancement mode mosfet 12-mar-2013 rev. a page 1 of 4 n3 = date code rohs compliant product a suffix of -c specifies ha...
Description	N-Channel Enhancement Mode MOSFET
File Size	678.51K / 4 Page	View it Online	Download Datasheet

				Rohm Co., Ltd.
Part No.	RGT30NS65D
OCR Text	...0 125 150 175 i c = 30a i c = 8a i c = 15a v ge = 15v 6/11 2014.05 - rev.a www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet rgt30ns65d l electrical characteristic curves collector to emitter saturation volt...
Description	650V 15A Field Stop Trench IGBT 650V 15A Field Stop Trench IGBT
File Size	704.08K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPA65R225C7
OCR Text	...gle pulse e as - - 48 mj i d =4.8a; v dd =50v; see table 10 avalanche energy, repetitive e ar - - 0.24 mj i d =4.8a; v dd =50v; see table 10 avalanche current, single pulse i as - - 4.8 a - mosfet dv/dt ruggedness dv/dt - - 100 v/ns v ds =0...
Description	high power thyristor diode
File Size	1,730.63K / 15 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSG4935P
OCR Text	...21 m ? v gs = -10v, i d = -7.8a - 28 35 v gs = -4.5v, i d = -6.0a forward transconductance a g fs - 22 - s v ds = -10v, i d = -7.8a diode forward voltage v sd - -0.7 -1.2 v i s = -1.7a, v gs = 0v dynamic b total gate charge ...
Description	P-Ch Enhancement Mode Power MOSFET
File Size	462.75K / 4 Page	View it Online	Download Datasheet

For -8a Found Datasheets File :: 16946 Search Time::1.281ms
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