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TOSHIBA[Toshiba Semiconductor]
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Part No. |
2SK3439
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OCR Text |
u-mosii)
2SK3439
DC-DC Converter Relay Drive and Motor Drive Applications
* * * * Low drain-source ON resistance: RDS (ON) = 3.8 m (typ.) High forward transfer admittance: |Yfs| = 70 S (typ.) Low leakage current: IDSS = 100 A (max) (VD... |
Description |
DC-DC Converter Relay Drive and Motor Drive Applications
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File Size |
317.33K /
6 Page |
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it Online |
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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Part No. |
2SK3442
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OCR Text |
u-mosii)
2SK3442
Switching Regulator, DC-DC Converter and Motor Drive Applications
Unit: mm
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Low drain-source ON resistance: RDS (ON) = 15 m (typ.) High forward transfer admittance: iYfsi = 28 S (typ.) Low leakage current:... |
Description |
TOSHIBA Field Effect Transistor silicon N Channel MOS Type (u-mosii) From old datasheet system Field Effect Transistor silicon N Channel MOS Type (u-mosii) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
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File Size |
200.42K /
6 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
TPC8305
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OCR Text |
u-mosii)
TPC8305
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
Small footprint due to small and thin package Low drain-source ON resistance : RDS (ON) = 24 m (typ.) High forward transfer admittance : |Yf... |
Description |
silicon P Channel MOS Type (u-mosii)
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File Size |
518.15K /
7 Page |
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it Online |
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u-mosii silicon Found Datasheets File :: 74 Search Time::0.844ms Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | |
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