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				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	TDA2050H TDA2050V TDA2050
OCR Text	...N SHORT CIRCUIT PROTECTION (OUT TO GND) THERMAL SHUTDOWN DESCRIPTION The TDA 2050 is a monolithic integrated circuit in Pentawatt package, i...268-3 of Jan 83) the maximum power which the amplifier is capable of producing across the rated load...
Description	32W Hi-Fi AUDIO POWER AMPLIFIER
File Size	183.58K / 13 Page	View it Online	Download Datasheet

				LATTICE[Lattice Semiconductor]
Part No.	ISPLSI5512VA-100LB272 ISPLSI5512VA-70LQ208 5512VA ISPLSI5512VA-100LB388 ISPLSI5512VA-100LQ208 ISPLSI5512VA-125LB272 ISPLSI5512VA-125LB388 ISPLSI5512VA-125LQ208 ISPLSI5512VA-70LB272 ISPLSI5512VA-70LB388 ISPLSI5512VA-70LB388I ISPLSI5512VA-110LB388 ISPLSI5512VA-110LQ208
OCR Text	...LD Gates / 512 Macrocells -- Up to 288 I/O Pins -- 512 Registers -- High-Speed Global Interconnect -- SuperWIDE 32 Generic Logic Block (GLB)...268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com September 2000 5512va_...
Description	70 MHz in-system prommable 3.3V superWIDE high density PLD In-System Programmable 3.3V SuperWIDE⑩ High Density PLD In-System Programmable 3.3V SuperWIDE High Density PLD 110 MHz in-system prommable 3.3V superWIDE high density PLD
File Size	325.35K / 26 Page	View it Online	Download Datasheet

				J S T MFG CO LTD
Part No.	VWS1.25-3AF FVD1.25-3AF 1.25-AF2.3B V1.25-AF2.3B 2-1AF FVD1.25-BL V1.25-BL2 2-AFW 2-AF2.3A 1.25-2AF
OCR Text	...67 ) 0.8 ( .031 ) 1,000 22 to 16 (0.25 to 1.65) 16 to 14 ( 1.04 to 2.63) 12 to 10 ( 2.63 to 6.64) 5.6 ( .220 ) 3.4 ( .134 ) 1.0 ( .039 ) 1,000 1.25-1af 1.25-2af 1.25-3af 1.25-af2.3a 1.25-af2.3b 1.25-af3a-s 1.25-bl...
Description	1.65 mm2, COPPER ALLOY, WIRE TERMINAL 2.63 mm2, COPPER ALLOY, WIRE TERMINAL
File Size	114.45K / 4 Page	View it Online	Download Datasheet

				Bel Fuse Inc.
Part No.	S553-6500-93
OCR Text	...erating temperature range -40 C to +85 C Meets IEC 695, 2-2 flammability requirements * * TM00152 PWB Process Capability: standard print...268 (6.81) 0.670 (17.02) MAX 0.268 (6.81) 0.340 (8.64) MAX 0.004 (0.10) 6 SURFACES 0.268...
Description
File Size	58.86K / 4 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXTT110N10P IXTQ110N10P
OCR Text	...ght Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M Maximum Ratings 100 100 20 V V V A A A A mJ J V/ns TO-3P (IXTQ) ...268 (IXTT) G S D = Drain TAB = Drain W C C C C G = Gate S = Source D (TAB) Features ...
Description	Discrete MOSFETs: Standard N-channel Types N-Channel Enhancement Mode
File Size	575.34K / 5 Page	View it Online	Download Datasheet

				IXYS, Corp. IXYS[IXYS Corporation] ETC[ETC]
Part No.	IXFH9N80Q IXFT9N80Q
OCR Text	...ght Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = ...268 (D3) ( IXFT) A mJ mJ V/ns W C C C C Nm/lb.in. g g Features l l G S (TAB) G = Gate S = ...
Description	HiPerFET Power MOSFETs Q-Class 9 A, 800 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, to-268AA Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	89.63K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFH12N100F IXFT12N100F
OCR Text	... 12 A = 1.05 trr 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0....268 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = ...
Description	HiPerRF Power MOSFETs
File Size	98.35K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFH26N60Q IXFT26N60Q
OCR Text	...ght Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = ...268 (D3) ( IXFT) G S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFETTM Power MOSFETs Q-Class
File Size	106.55K / 2 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXTT30N50P IXTV30N50PS IXTH30N50P IXTQ30N50P
OCR Text	to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c30a i dm t c ...268 5 g ...
Description	N-Channel Enhancement Mode Avalanche Rated MOSFET N-CH 500V 30A TO-3P N-Channel Enhancement Mode Avalanche Rated
File Size	328.74K / 5 Page	View it Online	Download Datasheet

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