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Vishay Intertechnology,Inc.
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| Part No. |
VCR7N
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| OCR Text |
...dc bias voltage (v gs ) applied to their high impedance gate terminal. minimum r ds occurs when v gs = 0 v. as v gs approaches the pinch-...206af (to-72) d g top view 1 23 4 vcr2n, vcr4n vcr7n updates to this data sheet may be obtained via ... |
| Description |
JFET Voltage-Controlled Resistor(最大栅源击穿电5V，最大导通电000ΩN沟道结型场效应管)
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| File Size |
36.34K /
3 Page |
 View
it Online |
Download Datasheet
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Vishay
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| Part No. |
SD211DE SST215 SST213 SD215DE SD213DE 70295
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| OCR Text |
...Ts utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. An
to-206af (TO-72)
integrated Zener diode provides ESD protection. These devices feature a poly-silicon gate for manufacturing reliability.
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| Description |
N-Channel Lateral DMOS FETs
From old datasheet system
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| File Size |
76.03K /
6 Page |
View
it Online |
Download Datasheet |
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Microsemi
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| Part No. |
JAN2N4416A JANTXV2N4416A JANTX2N4416A
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| OCR Text |
...ure range t op , t stg - 65 to +200 0 c (1) derate linearly 1.7 mw/ 0 c for t a > +25 0 c. to - 72* (to - 206af) *see appendix a for package outline electrical characteristics (t a = +25 0 c unless otherwise not... |
| Description |
N Channel MOSFET
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| File Size |
49.32K /
2 Page |
View
it Online |
Download Datasheet |
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Vishay
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| Part No. |
SD214DE 70294
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| OCR Text |
...Ts utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. These MOSFETs do not have a gate protection Zener diode
to-206af (TO-72)
which results in lower gate leakage and " voltage capability from gate ... |
| Description |
N-Channel Lateral DMOS FETs
From old datasheet system
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| File Size |
40.86K /
5 Page |
View
it Online |
Download Datasheet |
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For
to-206af Found Datasheets File :: 29 Search Time::3.062ms
Page :: | 1 | 2 | <3> | |
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