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General Electric Solid State
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| Part No. |
IRF452
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| Description |
N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A.
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| File Size |
191.64K /
5 Page |
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it Online |
Download Datasheet
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CANDD[C&D Technologies]
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| Part No. |
1002 1003 1000 1001
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| Description |
Pulse Transformers of Pairs:18; Features:Alumunium Foil Polyester/Tinned Copper braid; Impedance:100ohm RoHS Compliant: Yes Shielded Paired Cable; Number of Conductors:20; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester tape; Shielding Coverage:100%; Number of Pairs:10 RoHS Compliant: Yes
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| File Size |
357.48K /
1 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
74AUP1G38GM132 74AUP1G38GW125
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| Description |
Low-power 2-input NAND gate (open drain); Package: SOT886 (XSON6); Container: tape reel smd AUP/ULP/V SERIES, 2-INPUT NAND GATE, PDSO6 Low-power 2-input NAND gate (open drain); Package: SOT353-1 (TSSOP5); Container: Reel Pack, Reverse, Reverse AUP/ULP/V SERIES, 2-INPUT NAND GATE, PDSO5
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| File Size |
73.46K /
15 Page |
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it Online |
Download Datasheet
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Price and Availability
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