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sot-313 Datasheet PDF File

For sot-313 Found Datasheets File :: 115 Search Time::1.828ms
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				Ricoh Corp
Part No.	R3111E091A-TZ
OCR Text	... PIN CONFIGURATION * TO-92 * SOT-89 * SOT-23-5 5 4 * SC-82AB 4 3 (mark side) (mark side) (mark side) (mark side) 1 2...313<3 31; 413 MAX. 41;69 31459 517 613 43 31:3 31;3 7RSW 58& Unit 9 9 --$ 9 9 P$ P$ --V SSP...
Description	IC,VOLT DETECTOR,FIXED, 0.9V,CMOS,SIP,3PIN,PLASTIC From old datasheet system
File Size	270.55K / 25 Page	View it Online	Download Datasheet

				Linear Technology
Part No.	LT3468 346812FA LT3468-2 LT3468-1
OCR Text	...sh Capacitor Low Profile (<1mm) SOT-23 Package The LT(R)3468/LT3468-1/LT3468-2 are highly integrated ICs designed to charge photoflash ca...313 312 2 3 4 5 VIN (V) 6 7 8 3468 G15 LT3468-1 Switch Current Limit 0.700 1.00 LT3468-2 Sw...
Description	Photoflash Capacitor Chargers in ThinSOT™ From old datasheet system Photoflash Capacitor Chargers in ThinSOT?
File Size	442.97K / 12 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTF3055L108 NTF3055L108D NTF3055L108T1 NTF3055L108T1G NTF3055L108T3 NTF3055L108T3G NTF3055L108T3LF NTF3055L108T3LFG
OCR Text	SOT-223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circu...313 112 40 440 160 60 pF (VDS = 7.0 Vdc, ID = 3.0 Adc) VGS(th) 1.0 - RDS(on) - VDS(on) - gfs - 0.290...
Description	Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 3 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET 3.0 A, 60 V, Logic Level N-Channel SOT-223(3A,60V逻辑电平,N通道，SOT-223封装的功率MOSFET) Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
File Size	73.02K / 6 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC N.A.
Part No.	FP1189
OCR Text	... Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package Product Description The FP1189 is a high performance 1/2-Watt HFET (Heterostructure F...313 176.55 0.002 87.44 0.544 0.988 -21.51 10.120 163.88 0.010 76.64 0.535 0.959 -42.21 9.681 148.45 ...
Description	High Performance ?-Watt HFET(Heterostructure FET) High Performance ?-Watt HFET(Heterostructure FET) High Performance ??Watt HFET(Heterostructure FET)
File Size	380.63K / 10 Page	View it Online	Download Datasheet

				Torex Semiconductor
Part No.	XC62RP3001TL XC62RP1502LH XC62RP1501TH
OCR Text	...nsumption : 3.2A (2.0V) NSOT-23/SOT-89/TO-92 Package GBattery Powered Equipment GReference Voltage Sources GCameras and Video Recorders GPa...313 This datasheet has been downloaded from: www. Datasheets for electronic c...
Description	POSITIVE VOLTAGE REGULATORS FOR VOLTAGE REFRENCE SOURCE
File Size	222.65K / 14 Page	View it Online	Download Datasheet

				Duracell NEC Corp. NEC[NEC] California Eastern Labs
Part No.	NE25118-T1 NE25118
OCR Text	...4 pin super mini-mold package, (SOT-343 type). Maximum package height of 1.0 mm makes the NE25118 an ideal device for PCMCIA card applicatio...313 2.233 2.420 2.300 2.332 2.229 2.447 2.303 2.348 2.367 S21 ANG 177.2 169.3 164.4 160.0 158.4 150....
Description	GENERAL PURPOSE DUAL-GATE GaAS MESFET
File Size	41.39K / 4 Page	View it Online	Download Datasheet

				M/A-Com
Part No.	AT259
OCR Text	...Temperature Range: -40C to +85C SOT-143 Plastic Package Tape and Reel Packaging Available AT-259 V4 Functional Schematic 4 3 Descrip...313 363 Max 3.1 3.2 3.5 3.8 + 0.4 + 2.5 + 7.5 -- -- -- -- -- 13 21 -- -- -- -- Flatness (Peak...
Description	Voltage Variable Absorptive Attenuator
File Size	165.72K / 3 Page	View it Online	Download Datasheet

				NEC
Part No.	NE461M02-T1
OCR Text	...H GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION: 27 dBm TYP at 1 GHz HIGH IP3: 37 dBm TYP at 1 GHz NE4...313 0.318 0.324 0.330 0.335 0.341 0.346 0.351 0.355 0.359 0.363 S22 ANG -108.4 -135.7 -152.0 -156.5 ...
Description	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
File Size	36.65K / 5 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NE461M02 NE461M02-T1
OCR Text	...H GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION: 27 dBm TYP at 1 GHz HIGH IP3: 37 dBm TYP at 1 GHz NE4...313 0.318 0.324 0.330 0.335 0.341 0.346 0.351 0.355 0.359 0.363 S22 ANG -108.4 -135.7 -152.0 -156.5 ...
Description	From old datasheet system NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
File Size	45.55K / 5 Page	View it Online	Download Datasheet

For sot-313 Found Datasheets File :: 115 Search Time::1.828ms
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