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    FDI025N06

Fairchild Semiconductor
Part No. FDI025N06
OCR Text ...age Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -...Width Quantity 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Uni...
Description 60V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench㈢ MOSFET 60V, 265A, 2.5mヘ
N-Channel PowerTrench? MOSFET 60V, 265A, 2.5mΩ

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    FDH50N50F133 FDA50N50

Fairchild Semiconductor
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Part No. FDH50N50F133 FDA50N50
OCR Text ...ain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power...Width - Quantity 30 30 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS /...
Description    500V N-Channel MOSFET

File Size 395.31K  /  8 Page

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    FDD889608 FDD8896 FDU8896

Fairchild Semiconductor
Part No. FDD889608 FDD8896 FDU8896
OCR Text ... 52oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25oC Operating and Storage Temperature...Width 12mm N/A Quantity 2500 units 75 units Electrical Characteristics TC = 25C unless otherwise ...
Description N-Channel PowerTrench? MOSFET
N-Channel PowerTrench庐 MOSFET
N-Channel PowerTrench㈢ MOSFET

File Size 356.23K  /  11 Page

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    FDD8882 FDU8882 FDD888208

Fairchild Semiconductor
Part No. FDD8882 FDU8882 FDD888208
OCR Text ...us (TC = Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25oC Operating and Storage Temperature...Width 12mm N/A Quantity 2500 units 75 units Electrical Characteristics TC = 25C unless otherwise ...
Description N-Channel PowerTrench? MOSFET
N-Channel PowerTrench㈢ MOSFET

File Size 357.90K  /  12 Page

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    FDD888008

Fairchild Semiconductor
Part No. FDD888008
OCR Text ... 52oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25oC Operating and Storage Temperature...Width 12mm Quantity 2500 units (c)2008 Fairchild Semiconductor Corporation FDD8880 Rev. B3 ...
Description N-Channel PowerTrench? MOSFET 30V, 58A, 9mΩ
N-Channel PowerTrench㈢ MOSFET 30V, 58A, 9mヘ

File Size 399.81K  /  11 Page

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    FDD8876 FDD887608 FDU8876

Fairchild Semiconductor
Part No. FDD8876 FDD887608 FDU8876
OCR Text ... 52oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25oC Operating and Storage Temperature...Width 12mm N/A Quantity 2500 units 75 units Electrical Characteristics TC = 25C unless otherwise ...
Description N-Channel PowerTrench? MOSFET
N-Channel PowerTrench㈢ MOSFET

File Size 398.34K  /  11 Page

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    FDD8874 FDD887408 FDU8874

Fairchild Semiconductor
Part No. FDD8874 FDD887408 FDU8874
OCR Text ...us (TC = Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25oC Operating and Storage Temperature...Width 12mm N/A (Tube) Quantity 2500 units 75 units Electrical Characteristics TC = 25C unless oth...
Description N-Channel PowerTrench MOSFET 30V, 116A, 5.1m ohm

File Size 425.50K  /  11 Page

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    FDD887008 FDD8870 FDU8870

Fairchild Semiconductor
Part No. FDD887008 FDD8870 FDU8870
OCR Text ... 52oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25oC Operating and Storage Temperature...Width 12mm N/A Quantity 2500 units 75 units Electrical Characteristics TC = 25C unless otherwise ...
Description N-Channel PowerTrench㈢ MOSFET
N-Channel PowerTrench庐 MOSFET
N-Channel PowerTrench? MOSFET

File Size 352.26K  /  11 Page

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    FDD424307 FDD4243

Fairchild Semiconductor
Part No. FDD424307 FDD4243
OCR Text ...on limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature...Width 12mm Quantity 2500 units (c)2007 Fairchild Semiconductor Corporation FDD4243 Rev.C1 1 ...
Description 40V P-Channel PowerTrench? MOSFET
40V P-Channel PowerTrench庐 MOSFET
40V P-Channel PowerTrench㈢ MOSFET

File Size 339.17K  /  6 Page

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    FDB889608

Fairchild Semiconductor
Part No. FDB889608
OCR Text ... 43oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25oC Operating and Storage Temperature...Width 24mm Quantity 800 units (c)2008 Fairchild Semiconductor Corporation FDB8896 Rev. B2 F...
Description N-Channel PowerTrench? MOSFET
N-Channel PowerTrench㈢ MOSFET

File Size 374.49K  /  11 Page

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