| |
|
 |
GPD OPTOELECTRONICS CORP
|
| Part No. |
GM4
|
| OCR Text |
...y (a/w) wavelength (nanometers) silicon germanium ingaas 2
gpd optoelectronics corp. operating circuits 3
ge pn detectors vhr series: designed for zero reverse bias applications requiring high shunt resistance. vhs series: designed for ... |
| Description |
PHOTO DIODE
|
| File Size |
392.68K /
12 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
CEL[California Eastern Labs]
|
| Part No. |
UPC3227TB-E3-A UPC3227TB UPC3227TB-E3
|
| OCR Text |
SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER
DESCRIPTION
The PC3227TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed... |
| Description |
BIPOLAR ANALOG INTEGRATED CIRCUIT
|
| File Size |
176.60K /
13 Page |
View
it Online |
Download Datasheet |
| |
|
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| Part No. |
R5509-72 R5509-42
|
| OCR Text |
... resistivity wafer > 0.02 kcm
Silicon, the indirect bandgap semiconductor, has lower photoluminescence emission compared with direct bandg...germanium detector (Ge PIN PD) which did not show a clear peak.
INTENSITY (RELATIVE)
300K ( )
... |
| Description |
NIR PHOTOMULTIPLIER TUBES
|
| File Size |
389.92K /
12 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
