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  rg-62 Datasheet PDF File

For rg-62 Found Datasheets File :: 9361    Search Time::4.047ms    
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    SPB80P06P SPP80P06P

INFINEON[Infineon Technologies AG]
Part No. SPB80P06P SPP80P06P
OCR Text ...30 V, V GS = -10 V, ID = -64 A, RG = 1 W Rise time tr - 18 27 VDD = -30 V, V GS = -10 V, ID = -64 A, RG = 1 W Turn-off dela...62 -60 -58 -56 -54 -60 V(BR)DSS -20 20 60 100 140 C 200 Tj Page 8 1999-1...
Description SIPMOS Power-Transistor SIPMOS功率晶体
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 23m

File Size 95.24K  /  9 Page

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    6752A

Pomona Electronics
Part No. 6752A
OCR Text rg 59, 59a, 59b, 62, 210 75 ? mode l 675 2a bnc (m) crimp type, rg 59, 59a, 59b, 62, 210 75 ? use for your 75 ? broadcast applications. features ? true 7 5 ? . desig ned for common cabl e types. ? preci...
Description BNC (M) Crimp Type, 75 Ω

File Size 215.65K  /  2 Page

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    APM4538K APM4538KC-TR APM4538KC-TRL APM4538KC-TU APM4538KC-TUL

Anpec Electronics Coropration
Part No. APM4538K APM4538KC-TR APM4538KC-TRL APM4538KC-TU APM4538KC-TUL
OCR Text ... V Dynamic Characteristics RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Gate Resistance Input Capacitance Output Capacitance Reverse Trans...62.5 C/W 1E-3 0.01 0.1 1 10 30 VDS - Drain - Source Voltage (V) Square Wave Pul...
Description Dual Enhancement Mode MOSFET (N-and P-Channel)

File Size 149.51K  /  13 Page

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    APM4532KC-TRL APM4532KC-TU APM4532KC-TUL APM4532KC-TR APM4532K

ANPEC[Anpec Electronics Coropration]
Part No. APM4532KC-TRL APM4532KC-TU APM4532KC-TUL APM4532KC-TR APM4532K
OCR Text ... V Dynamic Characteristics RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Gate Resistance VGS=0V,VDS=0V,F=1MHz N-Channel VGS=0V, VDS=25V, Fr...62.5 C/W 2 0.1 DC 0.01 0.01 TA=25 C 0.1 1 10 100 O 1E-3 1E-4 1E-3 0.01 0.1...
Description Dual Enhancement Mode MOSFET (N-and P-Channel)

File Size 156.71K  /  13 Page

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    SGW15N60 SGP15N60 SGP15N6008

Infineon Technologies AG
Part No. SGW15N60 SGP15N60 SGP15N6008
OCR Text ... 0.5, VCE = 400V, VGE = 0/+15V, RG = 21) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 35A 140W 30A 120W 100W 80W 60W 40W 20W 0W 25C IC, COLLECTOR CURRENT POWER DISSIPATION 25A ...
Description Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

File Size 332.95K  /  12 Page

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    IRF3205 IRF3205PBF

IRF[International Rectifier]
Part No. IRF3205 IRF3205PBF
OCR Text ...- VDD = 28V --- ID = 62A ns --- RG = 4.5 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and cente...62 (.10 3) 10.54 (.415) 10.29 (.405) 3.7 8 (.149 ) 3.5 4 (.139 ) -A 6.47 (.255) 6.10 (.240) -B4.69 (...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)

File Size 91.40K  /  8 Page

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    CM75MX-24A

Mitsubishi Electric Semiconductor
Part No. CM75MX-24A
OCR Text ...VCC = 600V, IC = 75A VGE = 15V, RG = 4.3 Inductive load (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) (IE = 75A) IE = 75A, VGE = 0V (Note. ...62 Unit mA V A V VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC ...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 212.96K  /  8 Page

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    intersil
Part No. EL5111EL5211EL5411
OCR Text ...MHz (EL5211 & EL5411 only) RF = RG = 1k and VOUT = 1.4V RF = RG = 1k and VOUT = 1.4V -4.0V VOUT 4.0V, 20% to 80% (AV = +1), VO = 2V step 7...62 66 70 VCM = 2.5V VCM = 2.5V 3 7 2 1 2 +5.5 60 15 mV V/C nA G pF V dB dB VS+ = +5V, VS- = 0V, RL =...
Description Single 60MHz Rail-to-Rail Input-Output Op Amp

File Size 232.85K  /  10 Page

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ..., VGS = 10V --- ID = 76A ns --- RG = 1.8 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- ...62 (.10 3) 10.54 (.4 15) 10.29 (.4 05) 3.78 (.14 9) 3.54 (.13 9) -A6.4 7 (.255) 6.1 0 (.240) -B4.69 ...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

File Size 93.04K  /  8 Page

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    STGP8NC60K GP8NC60K GD8NC60K STGD8NC60K

STMicroelectronics
Part No. STGP8NC60K GP8NC60K GD8NC60K STGD8NC60K
OCR Text ...onditions VCC = 390V, IC = 3A , RG= 10 VGE= 15V, Tj= 25C (see Figure 19) VCC = 390V, IC =3A RG= 10 VGE= 15V, , Tj=125C (see Figure 19) Vcc =...62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/17 Package...
Description N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT

File Size 422.40K  /  17 Page

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